MPSA27_15 datasheet, PDF - EEWORLD Datasheet

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MPSA27_15: DescriptionEPITAXIAL PLANAR NPN TRANSISTOR; File Size345KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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MPSA27_15 Overview

EPITAXIAL PLANAR NPN TRANSISTOR

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SEMICONDUCTOR

TECHNICAL DATA

DARLINGTON TRANSISTOR

B

MPSA27

EPITAXIAL PLANAR NPN TRANSISTOR

C

FEATURES

A

・Complementary

to MPSA77.

N

K

D

E

G

MAXIMUM RATINGS (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

SYMBOL

V

CBO

V

CES

V

EBO

I

C

P

C

T

j

T

stg

RATING

60

10

500

625

150

-55½150

UNIT

H

V

F

M

V

mA

mW

℃

L

1

2

3

C

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

_

14.00 + 0.50

0.55 MAX

2.30

0.45 MAX

1.00

J

1. EMITTER

2. BASE

3. COLLECTOR

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

DC Current Gain

h

FE

(2) *

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

* Pulse Test : PW≤300μ Duty Cycle≤2%.

S,

V

CE(sat)

*

V

BE

*

V

CE

=5V, I

C

=100mA

I

C

=100mA, I

B

=0.1mA

V

CE

=5V, I

C

=100mA

10K

-

1.5

2

V

SYMBOL

I

CBO

I

EBO

V

(BR)CES

V

(BR)CBO

h

FE

(1) *

TEST CONDITION

V

CE

=50V, I

E

=0

V

EB

=10V, I

B

=0

I

C

=100μ I

E

=0

A,

I

C

=100μ I

E

=0

A,

V

CE

=5V, I

C

=10mA

MIN.

-

60

10K

TYP.

-

MAX.

100

-

UNIT

nA

V

2002. 2. 20

Revision No : 1

1/2

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