SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 JANUARY 1996
ZDT1049
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T1049
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
T
j
:T
stg
VALUE
80
25
5
20
5
500
-55 to +150
UNIT
V
V
V
A
A
mA
°C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
SYMBOL
P
tot
VALUE
2.25
2.75
18
22
55.6
45.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 360
ZDT1049
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
SYMBOL
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
I
EBO
I
CES
MIN.
80
80
25
80
5
TYP.
120
120
35
120
8.75
0.3
0.3
0.3
30
60
125
155
890
820
250
300
300
200
35
430
450
450
350
70
180
45
125
380
60
10
10
10
45
80
180
220
950
900
MAX.
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=100µA
I
C
=100µA
I
C
=10mA
I
C
=100µA, V
EB
=1V
I
E
=100µA
V
CB
=50V
V
EB
=4V
V
CES
=50V
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=4A, I
B
=50mA*
I
C
=4A, I
B
=50mA*
I
C
=4A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=50mA, V
CE
=10V
f=50MHz
V
CB
=10V, f=1MHz
I
C
=4A, I
B
=40mA, V
CC
=10V
I
C
=4A, I
B
=±40mA, V
CC
=10V
Collector-Emitter Saturation V
CE(sat)
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
1200
Transition Frequency
Output Capacitance
Turn - On Time
Turn -Off Time
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 361
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