CS18NZ datasheet, PDF - EEWORLD Datasheet

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CS18NZ: DescriptionSILICON CONTROLLED RECTIFIERS; CategoryAnalog mixed-signal IC Trigger device; File Size533KB，2 Pages; ManufacturerCentral Semiconductor

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CS18NZ Overview

SILICON CONTROLLED RECTIFIERS

CS18NZ Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	_compli
ECCN code	EAR99
Configuration	SINGLE
Maximum DC gate trigger current	0.02 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	5 mA
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
On-state non-repetitive peak current	10 A
Number of components	1
Number of terminals	3
Maximum on-state current	1000 A
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	1 A
Off-state repetitive peak voltage	800 V
Repeated peak reverse voltage	800 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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CS18BZ

CS18DZ

CS18MZ

CS18NZ

SILICON CONTROLLED RECTIFIERS

1.0 AMP, 200 THRU 800 VOLT

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS18BZ series

types are hermetically sealed silicon controlled

rectifiers manufactured in a TO-18 case, designed for

control systems and sensing circuit applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

CS18BZ

Peak Repetitive Off-State Voltage

VDRM, VRRM

200

RMS On-State Current (TC=90°C)

Nonrept. On-State Current

Fusing Current (t=10ms)

Peak Gate Current (t=10μs)

Peak Gate Dissipation (t=10μs)

Gate Dissipation

Operating Junction Temperature

Storage Temperature

Thermal Resistance

IT(RMS)

ITSM

I

2

t

IGM

PGM

PG(AV)

TJ

Tstg

Θ

JC

Θ

JA

CS18DZ

400

10

CS18MZ

600

CS18NZ

800

UNITS

V

A

2

s

A

W

°C

°C/W

1.0

0.24

1.0

2.0

0.1

-40 to +125

-40 to +150

32

200

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

IDRM, IRRM

Rated VDRM, VRRM, RGK=1.0KΩ

IDRM, IRRM

Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C

VTM

IGT

VGT

IH

dv/dt

IT=2.0A

VD=12V, RL=10Ω

RGK=1.0KΩ

VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C

25

TYP

MAX

1.0

0.1

2.15

20

0.8

5.0

UNITS

μA

mA

V

μA

V

mA

V/μs

1.6

0.65

0.5

R0 (13-February 2013)

CS18NZ Related Products

	CS18NZ	CS18DZ	CS18MZ	CS18BZ
Description	SILICON CONTROLLED RECTIFIERS	SILICON CONTROLLED RECTIFIERS	SILICON CONTROLLED RECTIFIERS	SILICON CONTROLLED RECTIFIERS
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor
Reach Compliance Code	_compli	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	0.02 mA	0.02 mA	0.02 mA	0.02 mA
Maximum DC gate trigger voltage	0.8 V	0.8 V	0.8 V	0.8 V
Maximum holding current	5 mA	5 mA	5 mA	5 mA
JEDEC-95 code	TO-18	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0
On-state non-repetitive peak current	10 A	10 A	10 A	10 A
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum on-state current	1000 A	1000 A	1000 A	1000 A
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	1 A	1 A	1 A	1 A
Off-state repetitive peak voltage	800 V	400 V	600 V	200 V
Repeated peak reverse voltage	800 V	400 V	600 V	200 V
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	-
Base Number Matches	1	1	1	-

Recommended Resources

Contact switch or proximity sensor circuit

Portable thyristor charger circuit diagram

Three-way flashing light controller

Check the triggering ability of the thyristor with a megohmmeter

+1.235V low power reference source

latch gate circuit

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