RF Input Voltage (single tone; on evaluation board)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Moisture Sensitivity Level IPC/JEDEC J-STD-20
Rating
75
30
-40 to +100
-30 to +110
MSL 3 @260
Unit
dBmV
V
°C
°C
°C
Caution!
ESD sensitive device.
RoHS status based on EU Directive
2011/65/EU
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Specification
Parameter
Min
General Performance
Power Gain
Slope
[1]
Unit
Typ
Max
Condition
V+= 24V; T
MB
=30°C; Z
S
=Z
L
=75Ω; I
DC
=I
DC
typical
21.0
22.5
1.0
20
19
18
16
15
21.5
23.0
1.5
22.0
24.0
2.5
1
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
f=45MHz
f=1218MHz
f=45MHz to 1218MHz
f=45MHz to 1218MHz (Peak to Valley)
f=45MHz to 320MHz
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1000MHz
f=1000MHz to 1218MHz
f=45MHz to 320MHz
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1000MHz
f=1000MHz to 1218MHz
f=50MHz to 1218MHz
Flatness of Frequency Response
Input Return Loss
Output Return Loss
20
19
18
17
16
Noise Figure
Total Current Consumption (DC)
3.0
430
4.0
450
dB
mA
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
2 of 8
RFCM3316
Specification
Parameter
Min
Distortion data 40MHz to 550MHz
CTB
XMOD
CSO
CIN
55
-73
-65
-76
60
-68
-60
-70
dBc
dBc
dBc
dB
V
O
=61dBmV at 1000MHz, 18dB extrapolated tilt, 79 analog
channels plus 75 digital channels (-6dB offset)
[2][4]
Unit
Typ
Max
Condition
V+= 24V; T
MB
=30°C; Z
S
=Z
L
=75Ω; I
DC
=I
DC
typical
Distortion data 40MHz to 550MHz
CTB
XMOD
CSO
CIN
-80
-78
-80
59
dBc
dBc
dBc
dB
V+= 24V; T
MB
=30°C; Z
S
=Z
L
=75Ω; I
DC
=I
DC
typical
V
O
=60dBmV at 1218MHz, 22dB extrapolated tilt, 79 analog
channels plus 111 digital channels (-6dB offset)
[3][4]
1.
2.
The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +52.4dBmV tilted output level, plus 75
digital channels, -6dB offset relative to the equivalent analog carrier.
79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +38dBmV to +47.4dBmV tilted output level, plus 111
digital channels, -6dB offset relative to the equivalent analog carrier.
Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite
Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is
measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to
Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
3.
4.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 8
RFCM3316
RFCM3316 Current Adjustment
The RFCM3316 can be operated over a wide range of current to provide maximum required performance with
minimum current consumption. Changing the value of resistor R3 on application circuit allows a variation of the current
between 430mA and 330mA (typ.). Within the recommended range of current between 430mA and 370mA gain (S21)
change is less than 0.2dB and noise figure change is less than 0.1dB.
Current versus Resistor R3
(typical values)
I [mA]
440
420
400
380
430
Device Current [mA],
typical
R3 [Ω]
V+= 24V; T
MB
=30°C;
Z
S
=Z
L
=75Ω
1500
1400
1300
1240
1150
1050
360
340
320
1050
410
390
370
350
330
1100
1150
1200
1250
1300
1350
1400
1450 1500
R3 [Ω]
Device Current versus Distortion Degradation
(typical values)
I [mA]
440
420
400
380
360
340
320
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
CTB and CIN degradation [dB]
Test condition:
V+= 24V; T
MB
=30°C; Z
S
=Z
L
=75Ω;
V
O
=61dBmV at 1000MHz, 18dB extrapolated tilt,
79 analog channels plus 75 digital channels (-6dB offset)
CTB
CIN
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
4 of 8
RFCM3316
RFCM3316 Temperature Sensing Feature
The RFCM3316 provides an internal NTC resistor for temperature sensing. This resistor is located right next to the
output transistor stage. Within the application circuit the NTC is built in a voltage divider. The output voltage of the
voltage divider (Vt) can be correlated to the module backside temperature.
Module Backside Temperature versus Vt
(typical values)
Temperature [°C]
120
110
100
90
80
70
60
50
40
30
20
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
Vt [mV]
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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