The RF5623 is a linear power amplifier IC designed specifically for WiMAX
medium power applications. The device is manufactured on an advanced
InGaP Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 802.16e transmitters. The
device is provided in a 3mmx3mmx0.45mm, 16-pin, leadless chip carrier
with a backside ground. The RF5623 is designed to maintain linearity over
a wide range of conditions and power outputs.
Optimum Technology Matching® Applied
DS120213
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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Analogue and Mixed Signal
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