RF5623Single
5.0V, 3.3 to
3.8 GHz Linear
Power Ampli-
fier
RF5623
SINGLE 5.0V, 3.3 TO 3.8 GHZ
LINEAR POWER AMPLIFIER
Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm
VCC2
VCC1
16
15
GND
14
Features
VCC2
13
12 RF OUT
3
rd
Stage
BIAS VCC 1
1
st
Stage
2
nd
Stage
Interstage
Match
High Gain; 32dB
2.5% EVM (RMS) at 26dBm,
5.0V
Integrated Power Detector
High Impedance Enable
Integrated Input Match
Footprint compatible to RF5602
VREG1 4
5
VREG2
RF IN 2
Input
Match
Interstage
Match
11 RF OUT
PDOWN
3
Detector
Bias
10 RF OUT
9
6
VREG3
7
NC
8
PDETECT
GND
Applications
WiMAX Customer Premises
Equipment
WiMAX Access Points
IEEE 802.16 WiMAX Systems
Functional Block Diagram
Product Description
The RF5623 is a linear power amplifier IC designed specifically for WiMAX
medium power applications. The device is manufactured on an advanced
InGaP Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 802.16e transmitters. The
device is provided in a 3mmx3mmx0.45mm, 16-pin, leadless chip carrier
with a backside ground. The RF5623 is designed to maintain linearity over
a wide range of conditions and power outputs.
Optimum Technology Matching® Applied
DS120213
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF5623
Absolute Maximum Ratings
Parameter
Supply Voltage (RF Applied)
Supply Voltage (No RF Applied)
DC Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Moisture Sensitivity
*Note: Maximum input power with a 50 load.
Rating
-0.5 to +5.25
-0.5 to +6.0
850
+10*
-40 to +85
-40 to +150
MSL1
Unit
V
V
mA
dBm
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Compliance WiMAX
IEEE802.16e
Frequency Range
Output Power
EVM
Operating Current
Quiescent Current
I
REG
P
DOWN
Current
Leakage Current
Gain
Gain Variation over Temperature
Low Gain Mode (Gain Reduction)
Specification
Min.
Typ.
Max.
Unit
Condition
Nominal Condition T=25 °C, V
CC
=5.0V,
V
REG
=2.85V, Freq=Full frequency range and duty
cycle=37.029% unless otherwise specified. 802.16e
16QAM modulation with 10MHz BW signal
3.3
3.6
26
2.5
600
380
3.6
3.8
3.5
700
470
10
10
1
GHz
GHz
dBm
%
mA
mA
mA
mA
mA
dB
±dB
dB
V
CC
=5.0V, V
REG
=0V, RF=Off
at Rated output Power
-40°C to +85°C
at V
CC
=5.0V, V
REG
1 and 3=2.85V, V
REG
2= Low and
Temp=25°C (In this mode the gain of the power
amplifier drops by TBD typical from its original gain)
Useable power detection range
with CW signal at V
CC
=5.0V
Output stable to within 90% of final gain
P
OUT
=26dBm, V
CC
=5VDc, V
REG
=2.85VDc.
T
REF
= 85°C
P
OUT
= 26dBm, V
CC
=5VDc, V
REG
=2.85VDc, Junction
to bottom of QFN package. T
REF
= 85°C
P
OUT
=26dBm, V
CC
=5VDc, V
REG
=2.85VDc, Junction
to bottom of PCB. T
REF
= 85°C
V
CC
=5.0V, V
REG
=2.85V, RF=Off
at P
OUT
=26dBm
28
32
2
25
Power Detector
Input Return Loss
Output P1dB
Turn-On Time
10
-15
32
0.5
150
23.7
29.7
1000
1000
29
-10
1.0
dBm
dB
dBm
us
°C
°C/W
°C/W
V
V
Thermal Data
Maximum Junction Temperature
for long term reliability, Tj Max
Thermal Resistance,
jc
Thermal Resistance,
j-Ref
Human Body Model
Charge Device Model
2 of 18
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS120213
RF5623
Pin
1
2
3
7, 9, 15
4
5
6
8
10, 11, 12
13, 14
16
Pkg Base
Function
BIAS VCC
RF IN
PDOWN
NC
VREG1
VREG2
VREG3
P DETECT
VCC3/RF OUT
VCC2
VCC1
GND
Description
Supply voltage for the bias reference and control circuits. May be connected with VCC1 and VCC2 as long
as V
CC
does not exceed 5.0V
DC
in this configuration.
RF input, internally matched and DC block is provided.
Power down pin. Apply <0.6V
DC
to power down the three power amplifier stages. Apply 1.75V
DC
to 5.0V
DC
to power up. If function is not desired, pin may be connected to V
REG
.
Not connected. May be connected to ground.
First stage input bias voltage. This pin requires a regulated supply to maintain nominal bias current.
Second stage input bias voltage. This pin requires a regulated supply to maintain nominal bias current.
Third stage input bias voltage. This pin requires a regulated supply to maintain nominal bias current.
Power detector provides an output voltage proportional to the RF output power level.
RF output and bias for the output stage. Output is externally matched to 50 and needs DC block.
Second stage supply voltage.
First stage supply voltage.
Ground connection. The back side of the package should be connected to the ground plane through as
short a connection as possible, e.g., PCB vias under the device are recommended.
Package Outline
DS120213
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 18
RF5623
Note: Thermal vias for center slug "B" should be incorporated into the PCB design. The number and size of thermal vias will
depend on the application, the power dissipation, and the electrical requirements. Example of the number and size of vias can
be found on the RFMD evaluation board layout.
4 of 18
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS120213
RF5623
PCB Metal Land and Solder Mask Pattern
Note: If it is desired to build the same PCB to accommodate the RF5602 as well as the RF5623/RF5603 use the following PCB
Patterns.
Note: Thermal vias for center slug “C” should be incorporated into the PCB design. The number and size of thermal vias will
depend on the application. Example of the number and size of vias can be found on the RFMD evaluation board layout.
DS120213
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 18
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