TIP35_15 datasheet, PDF - EEWORLD Datasheet

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TIP35_15: Description25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218; Categorysemiconductor Discrete semiconductor; File Size188KB，4 Pages; ManufacturerCentral Semiconductor

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TIP35_15 Overview

25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218

TIP35_15 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	25 A
Maximum Collector-Emitter Voltage	60 V
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN LEAD
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	10
Rated crossover frequency	3 MHz

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Power Transistors

TO-218 Case* (Continued)

General Purpose Amplifier

TYPE NO.

(A)

NPN

BDV65

BDV65A

BDV65B

BDW83A

BDW83B

BDW83C

TIP33A

TIP33B

TIP33C

TIP35A

TIP35B

TIP35C

TIP140

TIP141

TIP142

TIP3055

PNP

BDV64

BDV64A

BDV64B

BDW84A

BDW84B

BDW84C

TIP34A

TIP34B

TIP34C

TIP36A

TIP36B

TIP36C

TIP145

TIP146

TIP147

TIP2955

125

130

125

(W)

BVCBO

(V)

MIN

100

BVCEO

(V)

MIN

100

MIN

1,000

750

1,000

MAX

20,000

100

5.0

6.0

3.0

5.0

4.0

3.0

4.0

hFE

@ IC @ VCE VCE(SAT) @ IC

(A)

(V)

MAX

2.0

2.5

1.0

1.8

3.0

1.1

5.0

6.0

3.0

4.0

(A)

(MHz)

**TYP

MIN

60**

3.0

Shaded areas indicate Darlington.

*Devices are also available in TO-247 Case

(isolated mounting hole) on special order.

Top View

Bottom View

TO-247 Case

(6-December 2004)

w w w. c e n t r a l s e m i . c o m

TIP35_15 Related Products

	TIP35_15	TIP35	TIP35A	TIP36B	TIP36C	TIP35B	TIP35C	TIP36
Description	25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218	25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218	25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218	25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218	25 A, 100 V, PNP, Si, POWER TRANSISTOR	POWER TRANSISTOR	25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254	25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
Number of terminals	3	3	3	3	3	3	3	3
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Number of components	1	1	1	1	1	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	-	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor	-	Central Semiconductor	Central Semiconductor
Parts packaging code	-	TO-3P	TO-218	TO-218	TO-218	TO-218	TO-218	TO-3P
package instruction	-	TO-3P, 3 PIN	TO-3P, 3 PIN	TO-3P, 3 PIN	TO-3P, 3 PIN	FLANGE MOUNT, R-PSFM-T3	TO-3P, 3 PIN	TO-3P, 3 PIN
Contacts	-	3	2	2	2	2	2	3
Reach Compliance Code	-	unknow	unknow	unknow	unknow	_compli	unknow	unknow
ECCN code	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	-	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	-	25 A	25 A	25 A	25 A	25 A	25 A	25 A
Collector-emitter maximum voltage	-	40 V	60 V	80 V	100 V	80 V	100 V	40 V
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	10	10	10	10	10	10	10
JEDEC-95 code	-	TO-218	TO-218	TO-218	TO-218	TO-218	TO-218	TO-218
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	-	e0	e0	e0	e0	e0	e0	e0
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-65 °C	-65 °C	-65 °C	-65 °C	-	-65 °C	-65 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	-	NPN	NPN	PNP	PNP	NPN	NPN	PNP
Maximum power dissipation(Abs)	-	125 W	125 W	125 W	125 W	125 W	125 W	125 W
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	NO	NO	NO	NO	NO	NO	NO
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Nominal transition frequency (fT)	-	3 MHz	3 MHz	3 MHz	3 MHz	300 MHz	3 MHz	3 MHz
VCEsat-Max	-	4 V	4 V	4 V	4 V	-	4 V	4 V

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