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TIP35B

Description
POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size188KB,4 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

TIP35B Overview

POWER TRANSISTOR

TIP35B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-218
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)25 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
Power Transistors
TO-218 Case* (Continued)
General Purpose Amplifier
TYPE NO.
IC
(A)
NPN
BDV65
BDV65A
BDV65B
BDW83A
BDW83B
BDW83C
TIP33A
TIP33B
TIP33C
TIP35A
TIP35B
TIP35C
TIP140
TIP141
TIP142
TIP3055
PNP
BDV64
BDV64A
BDV64B
BDW84A
BDW84B
BDW84C
TIP34A
TIP34B
TIP34C
TIP36A
TIP36B
TIP36C
TIP145
TIP146
TIP147
TIP2955
12
12
12
15
15
15
10
10
10
25
25
25
10
10
10
15
125
125
125
130
130
130
80
80
80
125
125
125
125
125
125
90
PD
(W)
BVCBO
(V)
MIN
60
80
100
60
80
100
60
80
100
60
80
100
60
80
100
100
BVCEO
(V)
MIN
60
80
100
60
80
100
60
80
100
60
80
100
60
80
100
60
MIN
1,000
1,000
1,000
750
750
750
20
20
20
10
10
10
1,000
1,000
1,000
20
MAX
--
--
--
20,000
20,000
20,000
100
100
100
75
75
75
--
--
--
100
5.0
5.0
5.0
6.0
6.0
6.0
3.0
3.0
3.0
15
15
15
5.0
5.0
5.0
4.0
4.0
4.0
4.0
3.0
3.0
3.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
hFE
@ IC @ VCE VCE(SAT) @ IC
(A)
(V)
(V)
MAX
2.0
2.0
2.0
2.5
2.5
2.5
1.0
1.0
1.0
1.8
1.8
1.8
3.0
3.0
3.0
1.1
5.0
5.0
5.0
6.0
6.0
6.0
3.0
3.0
3.0
15
15
15
10
10
10
4.0
(A)
fT
(MHz)
**TYP
MIN
60**
60**
60**
--
--
--
3.0
3.0
3.0
3.0
3.0
3.0
--
--
--
3.0
Shaded areas indicate Darlington.
*Devices are also available in TO-247 Case
(isolated mounting hole) on special order.
Top View
Bottom View
TO-247 Case
(6-December 2004)
w w w. c e n t r a l s e m i . c o m

TIP35B Related Products

TIP35B TIP35_15 TIP35 TIP35A TIP36B TIP36C TIP35C TIP36
Description POWER TRANSISTOR 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218 25 A, 100 V, PNP, Si, POWER TRANSISTOR 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead - Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code TO-218 - TO-3P TO-218 TO-218 TO-218 TO-218 TO-3P
package instruction FLANGE MOUNT, R-PSFM-T3 - TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN TO-3P, 3 PIN
Contacts 2 - 3 2 2 2 2 3
Reach Compliance Code _compli - unknow unknow unknow unknow unknow unknow
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR - COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 25 A - 25 A 25 A 25 A 25 A 25 A 25 A
Collector-emitter maximum voltage 80 V - 40 V 60 V 80 V 100 V 100 V 40 V
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 - 10 10 10 10 10 10
JEDEC-95 code TO-218 - TO-218 TO-218 TO-218 TO-218 TO-218 TO-218
JESD-30 code R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 - e0 e0 e0 e0 e0 e0
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN - NPN NPN PNP PNP NPN PNP
Maximum power dissipation(Abs) 125 W - 125 W 125 W 125 W 125 W 125 W 125 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO - NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Nominal transition frequency (fT) 300 MHz - 3 MHz 3 MHz 3 MHz 3 MHz 3 MHz 3 MHz
Maker - - Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Minimum operating temperature - - -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
VCEsat-Max - - 4 V 4 V 4 V 4 V 4 V 4 V

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