MJE700 THRU MJE703
MJE800 THRU MJE803
PNP
NPN
w w w. c e n t r a l s e m i . c o m
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE700, MJE800
series devices are medium power complementary
silicon Darlington transistors designed for audio amplifier
applications as complementary output devices.
MARKING: FULL PART NUMBER
TO-126 CASE
MJE700
MJE701
MJE800
MJE801
60
60
5.0
4.0
100
40
-65 to +150
3.13
MJE702
MJE703
MJE802
MJE803
80
80
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
ICEO
IEBO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(ON)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
fT
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ
JC
UNITS
V
V
V
A
mA
W
°C
°C/W
CHARACTERISTICS:
(TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCB=Rated VCBO, TC=100°C
VCE=Rated VCEO
VEB=5.0V
IC=50mA (MJE702,703,802,803)
IC=50mA (MJE700,701,800,801)
IC=1.5A, IB=30mA (MJE700,702,800,802)
IC=2.0A, IB=40mA (MJE701,703,801,803)
IC=4.0A, IB=40mA
VCE=3.0V, IC=1.5A (MJE700,702,800,802)
VCE=3.0V,
VCE=3.0V,
VCE=3.0V,
VCE=3.0V,
VCE=3.0V,
VCE=3.0V,
IC=2.0A (MJE701,703,801,803)
IC=4.0A
IC=1.5A (MJE700,702,800,802)
IC=2.0A (MJE701,703,801,803)
IC=4.0A
IC=1.5A, f=1.0MHz
80
60
MAX
100
500
100
2.0
UNITS
μA
μA
μA
mA
V
V
V
V
V
V
V
V
2.5
2.8
3.0
2.5
2.5
3.0
750
750
100
1.0
MHz
R2 (23-January 2014)
Integrated technical exchanges
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