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MJE701

Description
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
CategoryDiscrete semiconductor    The transistor   
File Size338KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

MJE701 Overview

4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

MJE701 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Code_compli
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1 MHz
VCEsat-Max2.8 V
MJE700 THRU MJE703
MJE800 THRU MJE803
PNP
NPN
w w w. c e n t r a l s e m i . c o m
COMPLEMENTARY
POWER DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE700, MJE800
series devices are medium power complementary
silicon Darlington transistors designed for audio amplifier
applications as complementary output devices.
MARKING: FULL PART NUMBER
TO-126 CASE
MJE700
MJE701
MJE800
MJE801
60
60
5.0
4.0
100
40
-65 to +150
3.13
MJE702
MJE703
MJE802
MJE803
80
80
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
ICEO
IEBO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(ON)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
fT
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ
JC
UNITS
V
V
V
A
mA
W
°C
°C/W
CHARACTERISTICS:
(TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCB=Rated VCBO, TC=100°C
VCE=Rated VCEO
VEB=5.0V
IC=50mA (MJE702,703,802,803)
IC=50mA (MJE700,701,800,801)
IC=1.5A, IB=30mA (MJE700,702,800,802)
IC=2.0A, IB=40mA (MJE701,703,801,803)
IC=4.0A, IB=40mA
VCE=3.0V, IC=1.5A (MJE700,702,800,802)
VCE=3.0V,
VCE=3.0V,
VCE=3.0V,
VCE=3.0V,
VCE=3.0V,
VCE=3.0V,
IC=2.0A (MJE701,703,801,803)
IC=4.0A
IC=1.5A (MJE700,702,800,802)
IC=2.0A (MJE701,703,801,803)
IC=4.0A
IC=1.5A, f=1.0MHz
80
60
MAX
100
500
100
2.0
UNITS
μA
μA
μA
mA
V
V
V
V
V
V
V
V
2.5
2.8
3.0
2.5
2.5
3.0
750
750
100
1.0
MHz
R2 (23-January 2014)

MJE701 Related Products

MJE701 MJE700 MJE702 MJE800 MJE802 MJE803 MJE703
Description 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor
Reach Compliance Code _compli not_compliant _compli unknow unknow _compli unknow
JESD-609 code e0 e0 e0 e0 e0 e0 e0
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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