PD - 50059D
GA400TD60U
"HALF-BRIDGE" IGBT DUAL INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED
™
antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Ultra-Fast
TM
Speed IGBT
V
CES
=
600
V
V
CE
(on) typ.
= 1.70V
@V
GE
=
15V
,
I
C
=
400A
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
CM
I
LM
I
FM
V
GE
V
ISOL
P
D
@ T
C
= 25°C
P
D
@ T
C
= 85°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
400
800
800
800
±20
2500
1250
650
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θJC
R
θCS
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
S
Mounting Torque, Case-to-Terminal 1, 2 & 3S
Weight of Module
Typ.
—
—
0.1
—
—
400
Max.
0.10
0.20
—
6.0
5.0
—
Units
°C/W
N
.
m
g
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05/15/02
GA400TD60U
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Min. Typ. Max. Units
Conditions
600 —
—
V
GE
= 0V, I
C
= 1mA
—
1.7 2.4
V
GE
= 15V, I
C
= 400A
—
1.8
—
V
V
GE
= 15V, I
C
= 400A, T
J
= 125°C
Gate Threshold Voltage
3.0
—
6.0
I
C
= 2.5mA
Temperature Coeff. of Threshold Voltage —
-11
— mV/°C V
CE
= V
GE
, I
C
= 2.5mA
Forward Transconductance
T
—
481 —
S
V
CE
= 25V, I
C
= 400A
Collector-to-Emitter Leaking Current
—
—
2.0
mA
V
GE
= 0V, V
CE
= 600V
—
—
20
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
Diode Forward Voltage - Maximum
—
3.7
—
V
I
F
= 400A, V
GE
= 0V
—
3.6
—
I
F
= 400A, V
GE
= 0V, T
J
= 125°C
Gate-to-Emitter Leakage Current
—
— 500
nA
V
GE
= ±20V
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Dynamic Characteristics - T
J
= 125°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off (1)
E
ts (1)
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)
M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
1806
251
612
1033
335
688
225
26
48
74
40136
2509
522
232
141
16292
1641
Max. Units
Conditions
2709
V
CC
= 400V
376
nC I
C
= 270A ,V
GE
= 15V
918
T
J
= 25°C
—
R
G1
= 15Ω, R
G2
= 0Ω,
—
ns
I
C
= 400A
—
V
CC =
360V
—
V
GE
= ±15V
—
mJ
—
89
—
V
GE
= 0V
—
pF
V
CC
= 30V
—
ƒ = 1 MHz
—
ns
I
C
= 400A
—
A
R
G1
= 15Ω
—
nC R
G2
= 0Ω
—
A/µs V
CC =
360V
di/dt=1300A/µs
2
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GA400TD60U
250
For both:
200
LOAD CURRENT (A)
D uty cy cle: 50%
TJ = 125°C
T s ink = 90°C
G ate drive as specified
P ow e r Dis sip ation =
175
W
150
S q u a re w a v e :
60 % of ra ted
vo ltag e
100
I
50
Id e a l d io d e s
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
I
C
, Collector-to-Emitter Current (A)
T
J
= 125
°
C
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
°
C
T = 125
°
C
J
100
100
T
J
= 25
°
C
10
10
1.0
V
= 15V
80µs PULSE WIDTH
GE
1.5
2.0
2.5
3.0
1
5.0
V
= 25V
80µs PULSE WIDTH
CE
6.0
7.0
8.0
9.0
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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GA400TD60U
500
3.0
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
I
C
= 800 A
400
300
2.0
200
I
C
= 400 A
100
I
C
= 200 A
0
25
50
75
100
125
150
T
C
, Case Temperature (
°
C)
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
T herm al R es pons e (Z
th JC
)
0.1
D = 0 .50
0.20
0 .10
0.01
0 .05
0 .02
0.01
SIN G L E P UL SE
(T H ER M A L R ES PO N S E)
P
DM
t
1
t2
Notes:
1. Duty factor D = t
1
/ t
2
0.001
0.0001
2. Peak TJ = P
DM
x Z
thJC
+ T
C
A
1000
0.001
0.01
0.1
1
10
100
t
1
, R ecta ngula r Pulse D u ration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA400TD60U
80000
V
GE
, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
60000
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 270A
16
C
ies
40000
12
C
oes
20000
8
C
res
4
0
1
10
100
0
0
400
800
1200
1600
2000
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
120
Total Switching Losses (mJ)
100
Total Switching Losses (mJ)
V
CC
= 360V
V
GE
= 15V
T
J
= 125
°
C
I
C
= 400A
1000
R
G1
=15
Ohm
G2
= 0
Ω
G
=
Ω
;R
V
GE
= 15V
V
CC
= 360V
I
C
=
800
A
100
80
I
C
=
400
A
I
C
=
200
A
60
40
0
10
20
30
40
50
( Ω
R
G
, Gate Resistance (Ohm)
)
10
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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