ZVP2106E datasheet, PDF - EEWORLD Datasheet

ZVP2106E: DescriptionPower Field-Effect Transistor, 0.28A I(D), 60V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14; CategoryDiscrete semiconductor The transistor; File Size303KB，8 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZVP2106E Overview

Power Field-Effect Transistor, 0.28A I(D), 60V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PDIP-T14
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SEPARATE, 4 ELEMENTS
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.28 A
Maximum drain current (ID)	0.28 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T14
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	4
Number of terminals	14
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	0.85 W
Maximum pulsed drain current (IDM)	3 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	ZVP2106E	ZVP2106B
Description	Power Field-Effect Transistor, 0.28A I(D), 60V, 5ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14	Small Signal Field-Effect Transistor, 0.76A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
Is it Rohs certified?	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	IN-LINE, R-PDIP-T14	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Configuration	SEPARATE, 4 ELEMENTS	SINGLE
Minimum drain-source breakdown voltage	60 V	60 V
Maximum drain current (Abs) (ID)	0.28 A	0.76 A
Maximum drain current (ID)	0.28 A	0.76 A
Maximum drain-source on-resistance	5 Ω	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T14	O-MBCY-W3
JESD-609 code	e0	e0
Number of components	4	1
Number of terminals	14	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	METAL
Package shape	RECTANGULAR	ROUND
Package form	IN-LINE	CYLINDRICAL
Peak Reflow Temperature (Celsius)	235	235
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	0.85 W	5 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	WIRE
Terminal location	DUAL	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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