LED36-TEC-PR
TECHNICAL DATA
Mid-Infrared Light Emitting Diode
Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown
on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for good electron confinement.
LED36-SMD3 has a stable ouput power and a lifetime more then 80000 hours.
Features
•
•
•
•
Structure: InAsSb/InAsSbP
Peak Wavelength: typ. 3.65 µm
Optical Ouput Power: typ. 30 µW qCW
Package: TO-5, with TEC, thermistor, PR and window
Specifications
Item
Peak Wavelength
FWHM
Quasi-CW
Optical Power
Pulsed
Optical Power
Switching Time
Operation Voltage
Operating
Temperature
Emitting Area
Soldering
Temperature
Package
Condition
T=300 K
150 mA CW
200 mA qCW
1A
T=300 K
200 mA qCW
Min.
3.60
0.40
20
180
10
0.2
-240 … +50
300x300
180
Rating
Typ.
3.65
0.50
30
200
20
-
Max.
3.70
0.60
40
220
30
1.0
Unit
µm
µm
µW
mW
ns
V
°C
µm
°C
(Unit: mm)
TO-5, with built-in thermocooler, thermoresistor,
parabolic reflector and window
Operating Regime
Quasi-CW
•
•
Maximum current 220 mA
Recommended current 150-200mA
Pulsed
•
Maximum current 1 A
(puls lenght 500 ns, repetition rate 2kHz)
24.11.2010
LED36-TEC-PR
1 of 2
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
