BC847PNQ
COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Finish.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Features
Epitaxial Die Construction
Two Internally Isolated NPN/PNP Transistors in One Package
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
SOT363
C1
B2
E2
E1
B1
C2
Top View
Device Schematic
Top View
Ordering Information
(Notes 4 & 5)
Part Number
BC847PNQ-7-F
BC847PNQ-7R-F
Notes:
Compliance
Automotive
Automotive
Marking
K7P
K7P
Reel Size (inches)
7
7
Tape Width (mm)
8
8
Quantity per Reel
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K7P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
Mar
3
2017
E
Apr
4
May
5
2018
F
Jun
6
2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
Nov
N
2022
J
Dec
D
BC847PNQ
Document number: DS38982 Rev. 1 - 2
1 of 6
www.diodes.com
June 2016
© Diodes Incorporated
BC847PNQ
Absolute Maximum Ratings: NPN, BC847B Type (Q
1
)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
Value
50
45
6
100
200
200
Unit
V
V
V
mA
mA
mA
Absolute Maximum Ratings: PNP, BC857B Type (Q
2
)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
Value
-50
-45
-6
-100
-200
-200
Unit
V
V
V
mA
mA
mA
Thermal Characteristics
– Total Device
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6) Total Device
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Note:
Symbol
P
D
R
JA
T
J
, T
STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB; the device is measured
under still air conditions whilst operating in a steady-state.
Thermal Characteristics
– Total Device
250
P
d
, POWER DISSIPATION (mW)
200
150
100
50
0
0
40
80
120
160
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve (Total Device)
BC847PNQ
Document number: DS38982 Rev. 1 - 2
2 of 6
www.diodes.com
June 2016
© Diodes Incorporated
BC847PNQ
Electrical Characteristics: NPN, BC847B Type (Q
1
)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Note:
Symbol
BV
CBO
BV
CEO
BV
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CBO
f
T
C
CBO
NF
Min
50
45
6
200
—
—
580
—
—
—
100
—
—
Typ
—
—
—
290
90
200
700
900
660
—
—
—
300
3.5
2.0
Max
—
—
—
450
250
600
—
700
720
15
5.0
—
6.0
10
Unit
V
V
V
—
mV
mV
mV
nA
µA
MHz
pF
dB
Test Condition
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CB
= 30V
V
CB
= 30V, T
A
= +150°C
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, I
C
= 200µA,
R
g
= 2.0kΩf = 1.0kHz,
f
= 200Hz
7. Short duration pulse test used to minimize self-heating effect.
1,000
0.5
I
C
I
B
= 20
100
V
CE
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.4
h
FE,
DC CURRENT GAIN
0.3
0.2
T
A
= 100°C
10
0.1
T
A
= 25°C
0.1
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 2. Typical DC Current Gain vs. Collector Current
(BC847B Type)
1
0.01
0
0.1
T
A
= -50 °C
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC847B Type)
1,000
T = 25°C
A
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
f = 1MHz
V
CE
= 10V
CAPACITANCE (pF)
10
V
CE
=5V
V
CE
= 2V
100
6
C
ibo
C
obo
10
0.1
V
R
, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance Characteristics (BC847B Type)
1.0
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Typical Gain-Bandwidth Product
vs. Collector Current (BC847B Type)
BC847PNQ
Document number: DS38982 Rev. 1 - 2
3 of 6
www.diodes.com
June 2016
© Diodes Incorporated
BC847PNQ
Electrical Characteristics: PNP, BC857B Type (Q
2
)
(@T
A
= +25°C unless otherwise specified.)
Characteristic (Note 8)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Note:
Symbol
BV
CBO
BV
CEO
BV
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
I
CBO
f
T
C
CBO
NF
Min
-50
-45
-6
220
—
—
-600
—
—
—
100
—
—
Typ
—
—
—
290
-75
-250
-700
-850
-650
—
—
—
200
3
—
Max
—
—
—
475
-300
-650
—
-950
-750
-820
-15
-4.0
—
4.5
10
Unit
V
V
V
—
mV
mV
mV
nA
µA
MHz
pF
dB
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
V
CE
= -5.0V, I
C
= -2.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
V
CE
= -5.0V, I
C
= -2.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
V
CE
= -5.0V, I
C
= -10mA,
f = 100MHz
V
CB
= -10V, f = 1.0MHz
V
CE
= -5V, I
C
= -200µA,
R
g
= 2.0kΩf = 1.0kHz,
f
= 200Hz
8. Short duration pulse test used to minimize self-heating effect.
-1,000
-0.5
I
C
I
B
= 10
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
-0.4
h
FE
, DC CURRENT GAIN
-100
-0.3
-0.2
T
A
= 25°C
°C
T
A
= 150°C
°C
-10
-0.1
T
A
= -50°C
°C
-1
-1
-10
-100
-1,000
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Typical DC Current Gain vs. Collector Current
(BC857B Type)
0
-0.1
-1,000
-1
-10
-100
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC857B Type)
-1,000
f = 1MHz
f
t
, GAIN-BANDWIDTH PRODUCT (MHz)
CAPACITANCE (pF)
10
Cibo
-100
6
Cobo
-10
-1
V
R
, REVERSE VOLTAGE (V)
Figure 8. Typical Capacitance Characteristics (BC857B Type)
-10
-100
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Typical Gain-Bandwidth Product
vs. Collector Current (BC857B Type)
BC847PNQ
Document number: DS38982 Rev. 1 - 2
4 of 6
www.diodes.com
June 2016
© Diodes Incorporated
BC847PNQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
E
E1
F
b
D
SOT363
Dim Min Max
Typ
A1
0.00 0.10
0.05
A2
0.90 1.00
1.00
b
0.10 0.30
0.25
c
0.10 0.22
0.11
D
1.80 2.20
2.15
E
2.00 2.20
2.10
E1
1.15 1.35
1.30
e
0.650 BSC
F
0.40 0.45 0.425
L
0.25 0.40
0.30
a
0°
8°
--
All Dimensions in mm
A2
c
A1
e
L
a
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
C
Dimensions
C
G
X
Y
Y1
Value
(in mm)
0.650
1.300
0.420
0.600
2.500
Y1
G
Y
X
BC847PNQ
Document number: DS38982 Rev. 1 - 2
5 of 6
www.diodes.com
June 2016
© Diodes Incorporated
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