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DUV280-CHIP

Description
Deep Ultraviolet Light Emission Source
File Size1MB,5 Pages
ManufacturerRoithner Lasertechnik GmbH
Websitehttp://www.roithner-laser.com/
Download Datasheet View All

DUV280-CHIP Overview

Deep Ultraviolet Light Emission Source

rev.2.0 08.05.15
DUV280-CHIP
Deep Ultraviolet Light Emission Source
280 nm, 2.0 mW
Naked Bare Die
Flip chip type
Beam angle 144 deg.
Description
DUV280-CHIP
is an
AlGaN
based DEEP-UV LED emission source, that is available as bare chip die, and in two different
submount configurations.
DUV280-CHIP
is of
Flip Chip
type without any bonding wires obscuring the emitting area.
Maximum Rating
(T
Parameter
Forward Current
(T
A
=25°C)
Reverse Current
(V
R
=5V)
Reverse Voltage
(I
R
=10µA)
Operating Temperature
Storage Temperature
CASE
= 25°C)
Symbol
I
F
I
R
V
R
T
OPR
T
STG
T
SOL
- 30
- 40
Values
Min.
Max.
40
100
5
+ 80
+ 100
+ 300
Unit
mA
µA
V
°C
°C
°C
Soldering Temperature (max. 5s)
Electro-Optical Characteristics
(T
Parameter
Peak Wavelength
Radiated Power
Spectral Width (FWHM)
Forward Voltage
Viewing Angle
Thermal resistance
Rise time*
Fall time*
Symbol
λ
P
P
O
∆λ
V
F
1/2
J-REF
t
R
t
F
275
1.0
CASE
=
25°C, I
F
=20 mA)
Unit
nm
mW
nm
8.0
V
deg.
°C/W
ns
ns
min.
Values
Typ.
280
2.0
10
7.0
144
190
/
/
Max.
285
* frequency=100kHz, duty cycle=1%, I
FP
=200mA
www.roithner-laser.com
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