TSM9N90E
900V, 9A, 1.4Ω
N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
900
1.4
72
Unit
V
Ω
nC
Features
●
●
100% Avalanche Tested
G-S ESD Protection Diode Embedded
Block Diagram
Ordering Information
Part No.
TSM9N90ECZ C0G
Package
TO-220
Packing
50pcs / Tube
TSM9N90ECI C0G
ITO-220
50pcs / Tube
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
N-Channel MOSFET with ESD Protection
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Symbol
V
DS
V
GS
T
C
= 25
o
C
T
C
= 100
o
C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
T
C
= 25℃
Derate above 25ºC
P
D
T
J
T
STG
TO-220
900
±30
9
5.7
36
9
29
454
4.5
290
2.32
150
ITO-220
Unit
V
V
9
5.7
36
A
A
A
mJ
mJ
V
Pulsed Drain Current
(Note 2)
Repetitive Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Single Pulse Avalanche Energy
Peak Diode Recovery
Power Dissipation
(Note 4)
(Note 3)
89
0.71
-55 to +150
W
℃/W
℃
℃
Operating Junction Temperature
Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R
ӨJC
R
ӨJA
TO-220
0.43
62.5
ITO-220
1.4
Unit
℃/W
1/8
Version: A14
TSM9N90E
900V, 9A, 1.4Ω
N-Channel Power MOSFET
Electrical Specifications
(T
C
= 25
o
C unless otherwise noted)
Parameter
Static
(Note 5)
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
(Note 6)
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 4.5A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 900V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
V
DS
= 30V, I
D
= 4.5A
I
S
= 9A, V
GS
= 0V
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
900
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
1.13
--
--
--
17
--
72
11
31
2470
192
27
52
97
212
159
570
6.6
Max
--
1.4
4.0
10
±100
--
1.5
--
--
--
--
--
--
--
--
--
--
--
--
Unit
V
Ω
V
µA
µA
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 7)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
V
DS
= 720V, I
D
= 9A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
V
GS
= 10V, I
D
= 9A,
V
DD
= 450V, R
G
= 25Ω
V
GS
= 0V, I
S
= 9A,
dI
F
/dt = 100A/µs
t
r
t
d(off)
t
f
t
fr
Q
fr
ns
ns
µC
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. L = 10.6mH, I
AS
= 9A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
o
C
4. I
SD
≦
9A, di/dt
≦
200A/µs, V
DD
≦
BV
DS
, Starting T
J
= 25
o
C
5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
6. For DESIGN AID ONLY, not subject to production testing.
7. Switching time is essentially independent of operating temperature.
2/8
Version: A14
TSM9N90E
900V, 9A, 1.4Ω
N-Channel Power MOSFET
Electrical Characteristics Curve
(Tc = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/8
Version: A14
TSM9N90E
900V, 9A, 1.4Ω
N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Drain Current vs. Case Temperature
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area (TO-220)
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
4/8
Version: A14
TSM9N90E
900V, 9A, 1.4Ω
N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Normalized Thermal Transient Impedance,
Junction-to-Ambient (TO-220)
Normalized Thermal Transient Impedance,
Junction-to-Ambient (ITO-220)
5/8
Version: A14
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