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TSM9N90ECIC0G

Description
900V, 9A, 1.4Ω N-Channel Power MOSFET
File Size907KB,8 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM9N90ECIC0G Overview

900V, 9A, 1.4Ω N-Channel Power MOSFET

TSM9N90E
900V, 9A, 1.4Ω
N-Channel Power MOSFET
TO-220
ITO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
900
1.4
72
Unit
V
Ω
nC
Features
100% Avalanche Tested
G-S ESD Protection Diode Embedded
Block Diagram
Ordering Information
Part No.
TSM9N90ECZ C0G
Package
TO-220
Packing
50pcs / Tube
TSM9N90ECI C0G
ITO-220
50pcs / Tube
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
N-Channel MOSFET with ESD Protection
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Symbol
V
DS
V
GS
T
C
= 25
o
C
T
C
= 100
o
C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
T
C
= 25℃
Derate above 25ºC
P
D
T
J
T
STG
TO-220
900
±30
9
5.7
36
9
29
454
4.5
290
2.32
150
ITO-220
Unit
V
V
9
5.7
36
A
A
A
mJ
mJ
V
Pulsed Drain Current
(Note 2)
Repetitive Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Single Pulse Avalanche Energy
Peak Diode Recovery
Power Dissipation
(Note 4)
(Note 3)
89
0.71
-55 to +150
W
℃/W
Operating Junction Temperature
Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R
ӨJC
R
ӨJA
TO-220
0.43
62.5
ITO-220
1.4
Unit
℃/W
1/8
Version: A14

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