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DTC114YCA

Description
NPN Small Signal Transistor
CategoryDiscrete semiconductor    The transistor   
File Size327KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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DTC114YCA Overview

NPN Small Signal Transistor

DTC114YCA Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)68
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTC114 YCA/YSA/YE/YUA
Taiwan Semiconductor
Small Signal Product
NPN Small Signal Transistor
FEATURES
- Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
- The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
- Only the on/off conditions need to be set for
operation, marking device design easy.
- Packing code with suffix "G" means
green compound (halogen-free)
Equivalent Circuit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Supply Voltage
Input Voltage
Output Current
Junction and Storage Temperature Range
SYMBOL
P
D
V
CC
V
IN
I
O
I
C(MAX)
T
J
, T
STG
YE
150
VALUE
YUA / YCA
200
50
-6
½
+40
70
100
-55 to + 150
YSA
300
UNIT
mW
V
V
mA
°C
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
SYMBOL
V
I(on)
V
I(off)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
MIN
-
0.3
-
-
-
68
7
3.7
-
TYP
-
-
-
-
-
-
10
4.7
250
MAX
1.4
-
0.3
0.88
0.5
-
13
5.7
-
CONDITION
V
O
=0.3V,I
O
=1mA
V
CC
=5V,I
O
=100μA
I
O
/I
I
=5mA/0.25mA
V
I
=5V
V
CC
=50V,V
I
=0
V
O
=5V,I
O
=5mA
-
-
V
O
=10V,I
O
=5mA,f=100MHz
MHz
KΩ
UNIT
V
V
mA
μA
Document Number: DS_S1412025
Version: B14

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Description NPN Small Signal Transistor NPN Small Signal Transistor NPN Small Signal Transistor NPN Small Signal Transistor NPN Small Signal Transistor NPN Small Signal Transistor NPN Small Signal Transistor NPN Small Signal Transistor NPN Small Signal Transistor NPN Small Signal Transistor

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