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BZX55C33

Description
33 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size162KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BZX55C33 Overview

33 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

BZX55C33 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionO-LALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage33 V
surface mountNO
technologyZENER
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance6.06%
Working test current5 mA
BZX55C2V0 thru BZX55C75
Taiwan Semiconductor
Small Signal Product
Hermatically Sealed Glass Zener
FEATURES
- Wide zener voltage range selection: 2.0V to 75V
- Compression bonded construction
- Hermetically sealed glasss
- Solder hot dip Tin(Sn) lead finish
- Pb free and RoHS compliant
- All external surfaces are corrosion
resistant and leads are readily solderable
- Packing code with suffix "G" means
Halogen-free
DO-35
Hermetically Sealed Glass
MECHANICAL DATA
- Case: DO-35
- High temperature soldering guaranteed: 260
o
C/10s
- Polarity: Indicated by black cathode band
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Forward Voltage
I
F
= 100 mA
Junction and Storage Temperature Range
SYMBO
P
D
V
F
T
J
, T
STG
VALUE
500
1
- 65 to +200
UNIT
mW
V
o
C
These ratings are limiting values above which the serviceability of the diode may be impaired.
Document Number: DS_S1410001
Version: C14
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