MBR3035CT thru MBR30150CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Dual Common Cathode Schottky Rectifier
TO-220AB
MECHANICAL DATA
Case:
TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.9 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
MBR
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=15A, T
J
=25℃
I
F
=15A, T
J
=125℃
I
F
=30A, T
J
=25℃
I
F
=30A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
℃
T
J
=125
℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
0.7
V
F
0.6
0.82
0.73
I
R
dV/dt
R
θJC
T
J
T
STG
1.0
- 55 to +150
- 55 to +150
15
1.0
0.77
0.67
-
-
0.2
10
10000
1.5
7.5
3035
CT
35
24
35
MBR
3045
CT
45
31
45
MBR
3050
CT
50
35
50
MBR
3060
CT
60
42
60
30
30
200
0.5
0.84
0.70
0.94
0.82
0.95
0.92
1.02
0.98
0.1
5
mA
V/μs
O
MBR
3090
CT
90
63
90
MBR
CT
100
70
100
MBR
UNIT
V
V
V
A
A
A
A
CT
150
105
150
30100 30150
V
C/W
O
O
C
C
Document Number: DS_D1308040
Version: J13
MBR3035CT thru MBR30150CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBR30xxCT
AEC-Q101
QUALIFIED
Prefix "H"
PACKING CODE
C0
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
TO-220AB
PACKING
50 / Tube
Note 1: "xx" defines voltage from 35V (MBR3035CT) to 150V (MBR30150CT)
EXAMPLE
PREFERRED P/N
MBR3060CT C0
MBR3060CT C0G
MBR3060CTHC0
PART NO.
MBR3060CT
MBR3060CT
MBR3060CT
H
AEC-Q101
QUALIFIED
PACKING CODE
C0
C0
C0
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- FORWARD CURRENT DERATING CURVE
35
AVERAGE FORWARD
A
CURRENT (A)
30
25
20
15
10
5
0
0
50
100
(
o
C)
150
CASE TEMPERATURE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
PEAK FORWARD SURGE CURRENT (A)
300
250
200
150
100
50
0
1
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
IF-INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (mA)
100
MBR3035CT-MBR3045CT
100
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
MBR3035CT-MBR3045CT
MBR3050CT-MBR30150CT
10
TJ=125℃
1
TJ=75℃
0.1
10
MBR3050CT-MBR3060CT
1
MBR30150CT
0.01
TJ=25℃
MBR3090CT-MBR30100CT
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
FORWARD VOLTAGE (V)
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308040
Version: J13
MBR3035CT thru MBR30150CT
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE PER LEG
10000
JUNCTION CAPACITANCE (pF)
A
MBR3035CT-MBR3045CT
MBR3050CT-MBR3060CT
MBR3090CT-MBR30150CT
f=1.0MHz
Vsig=50mVp-p
100
FIG. 6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
TRANSIENT THERMAL
IMPEDANCE (℃/W)
0.1
1
10
100
10
1000
1
100
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
10
100
T-PULSE DURATION. (sec)
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
-
2.62
2.80
0.68
3.54
14.60
13.19
2.41
4.42
1.14
5.84
2.20
0.35
Max
10.50
3.44
4.20
0.94
4.00
16.00
14.79
2.67
4.76
1.40
6.86
2.80
0.64
Unit (inch)
Min
-
0.103
0.110
0.027
0.139
0.575
0.519
0.095
0.174
0.045
0.230
0.087
0.014
Max
0.413
0.135
0.165
0.037
0.157
0.630
0.582
0.105
0.187
0.055
0.270
0.110
0.025
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
MARKING DIAGRAM
P/N
G
YWW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1308040
Version: J13
MBR3035CT thru MBR30150CT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1308040
Version: J13
京公网安备 11010802033920号
EEWORLD
