DSS8110Y
100V NPN LOW SATURATION TRANSISTOR IN SOT363
Features
BV
CEO
> 100V
I
C
= 1A high Continuous Collector Current
I
CM
= 3A Peak Pulse Current
R
CE(sat)
= 200mΩ for a Low Equivalent On-Resistance
Low Saturation Voltage V
CE(sat)
< 200mV @ 1A
Complementary PNP Type Available (DSS9110Y)
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
e3
Weight: 0.006 grams (approximate)
SOT-363
C
C
C
E
B
E
C
C
B
Top View
Device Symbol
Pin-Out Top
Ordering Information
(Note 4)
Product
DSS8110Y-7
Notes:
Marking
ZN5
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green”
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZN5
ZN5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
2
2012
Z
Mar
3
2013
A
Apr
4
2014
B
May
5
YM
2015
C
Jun
6
2016
D
Jul
7
2017
E
Aug
8
2018
F
Sep
9
2019
G
Oct
O
2020
H
Nov
N
2021
I
Dec
D
DSS8110Y
Document number: DS31679 Rev. 3 - 2
1 of 7
www.diodes.com
July 2014
© Diodes Incorporated
DSS8110Y
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current – Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
120
100
5
1
3
0.3
Unit
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
P
D
R
JA
R
JL
T
J
, T
STG
Value
625
200
81
-55 to +150
Unit
mW
°C/W
°C/W
°C
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage Temperature Range
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (at the end of collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS8110Y
Document number: DS31679 Rev. 3 - 2
2 of 7
www.diodes.com
July 2014
© Diodes Incorporated
DSS8110Y
Thermal Characteristics and Derating Information
0.7
0.6
10
Pw = 100µs
P
D
, POWER DISSIPATION (W)
I
C
, COLLECTOR CURRENT (A)
0.5
0.4
0.3
0.2
0.1
0
R
JA
= 200°C/W
1
DC
Pw = 100ms
0.1
Pw = 10ms
Pw = 1ms
0.01
0
50
100
150
200
T
A
, AMBIENT TEMPERATURE (
C)
Fig. 1 Power Dissipation vs. Ambient Temperature
0.001
0.1
1
10
100
1,000
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R
JA
(t) = r(t) * R
JA
R
JA
= 180°C/W
P(pk)
D = 0.02
0.01
t
1
D = 0.01
D = 0.005
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
10
100
1,000
DSS8110Y
Document number: DS31679 Rev. 3 - 2
3 of 7
www.diodes.com
July 2014
© Diodes Incorporated
DSS8110Y
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 8)
DC Current Gain
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
Min
120
100
5
150
150
100
80
100
Typ
Max
100
50
100
100
500
40
120
200
200
1.05
0.9
7.5
Unit
V
V
V
nA
µA
nA
nA
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 80V, I
E
= 0, T
A
= 150°C
V
CE
= 80V, V
BE
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 250mA
V
CE
= 10V, I
C
= 500mA
V
CE
= 10V, I
C
= 1A
I
C
= 100mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 100mA
V
CE
= 10V, I
C
= 1A
V
CB
= 10V, f = 1.0MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
h
FE
V
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
V
CE(sat)
R
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
mV
mΩ
V
V
pF
MHz
8. Measured under pulsed conditions. Pulse width
300µs. Duty cycle
2%.
DSS8110Y
Document number: DS31679 Rev. 3 - 2
4 of 7
www.diodes.com
July 2014
© Diodes Incorporated
DSS8110Y
1.2
1.0
500
I
C
, COLLECTOR CURRENT (A)
I
B
= 5mA
400
h
FE
, DC CURRENT GAIN
T
A
= 150°C
T
A
= 125°C
0.8
I
B
= 4mA
300
T
A
= 85°C
0.6
I
B
= 3mA
0.4
I
B
= 2mA
200
T
A
= 25°C
0.2
0
I
B
= 1mA
100
T
A
= -55°C
0
2
4
6
8
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
1
I
C
/I
B
= 10
1.2
V
CE
= 10V
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
0.8
T
A
= -55°C
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.6
T
A
= 25°C
0.4
T
A
= 125°C
T
A
= 85°C
0.2
0
0.0001
T
A
= 150°C
0.01
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
I
C
/I
B
= 10
1.0
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.4
T
A
= 150°C
T
A
= 85°C
T
A
= 125°C
0.2
0
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DSS8110Y
Document number: DS31679 Rev. 3 - 2
5 of 7
www.diodes.com
July 2014
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
