MBR6030PT - MBR6045PT
60A SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish, RoHS Compliant (Note 3)
Dim
A
TO-3P
Min
1.88
4.68
20.63
18.5
2.1
0.51
15.38
1.90
2.9Æ
3.78
5.2
0.89
1.82
2.92
11.70
¾
Max
2.08
5.36
22.38
21.5
2.4
0.76
16.25
2.70
3.65Æ
4.50
5.7
1.53
2.46
3.23
12.84
6.10
H
A
B
B
C
D
E
G
H
J
K
S
R
P
N
J
C
K
L
G
Mechanical Data
·
·
·
·
·
·
·
·
Case: TO-3P
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Ordering Information: See Last Page
Marking: Type Number
Weight: 5.6 grams (approximate)
Q
D
L
M
N
P
Q
R
S
E
M
M
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 125°C
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
@ I
F
= 30A, T
C
= 25°C
@ I
F
= 30A, T
C
= 125°C
@ I
F
= 60A, T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
@ T
A
= 25°C unless otherwise specified
MBR
6030PT
30
21
MBR
6035PT
35
25
60
500
0.62
0.55
0.75
1.0
50
650
1.0
MBR
6040PT
40
28
MBR
6045PT
45
32
Unit
V
V
A
A
V
FM
I
RM
C
T
R
qJC
T
j,
T
STG
V
mA
pF
°C/W
°C
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes:
-55 to +150
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS30053 Rev. 4 - 2
1 of 3
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MBR6030PT - MBR6045PT
ã
Diodes Incorporated
80
70
60
50
40
30
20
10
0
0
50
100
150
T
C
, CASE TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
600
8.3ms single half-sine-wave
JEDEC method
100
I
F
, INSTANTANEOUS FWD CURRENT (A)
I
O
, AVERAGE FORWARD CURRENT (A)
10
1.0
0.1
0
0.2
0.4
0.6
0.8
1.0
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
10000
T
j
= 25
°
C
500
C
T
, CAPACITANCE (pF)
400
300
1000
200
100
0
1
10
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
100
100
100
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance per Element
10
T
j
= 100
°
C
1.0
0.1
T
j
= 25
°
C
0.01
0
10
20
30
40
50
60
PEAK REVERSE VOLTAGE (V)
Fig. 5 Typical Reverse Characteristics
DS30053 Rev. 4 - 2
2 of 3
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MBR6030PT - MBR6045PT
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