UNISONIC TECHNOLOGIES CO., LTD
UTD410
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The
UTD410
can provide excellent R
DS(ON)
and low gate
charge by using advanced trench technology. This
UTD410
is
suitable for using as a load switch or in PWM applications.
Power MOSFET
FEATURES
* 30V/8A
* R
DS(ON)
=65mΩ @V
GS
=10 V
SYMBOL
2.Drain
*Pb-free plating product number: UTD410L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UTD410-TN3-R
UTD410L-TN3-R
UTD410-TN3-T
UTD410L-TN3-T
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
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Copyright © 2007 Unisonic Technologies Co., Ltd
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QW-R502-142.A
UTD410
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25℃, unless otherwise specified)
PARAMETER
Power MOSFET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
Continuous Drain Current
I
D
8
A
Pulsed Drain Current (Note1)
I
DM
20
Repetitive Avalanche Energy (L=0.1mH Note1)
E
AR
10
mJ
Power Dissipation
P
D
25
W
Junction Temperature
T
J
+175
℃
Storage Temperature
T
STG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
SYMBOL
θ
JA
MIN
TYP
46
MAX
60
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
Drain-Source On-State Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=250µA
V
DS
=24V,V
GS
=0V
V
DS
=0 V, V
GS
= ±20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=8A
V
GS
=4.5V, I
D
=2A
MIN
30
1
±100
1
1.8
48
75
288
57
39
3.7
3.7
15.6
2.6
6.72
0.76
1.78
0.75
1
4.3
12.6
5.1
3
65
105
TYP
MAX UNIT
V
µA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
ns
nC
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=15 V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
GS
=10V,V
DD
=15V, R
L
=1.8Ω,
R
G
=3Ω
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=15V, I
D
=8A
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1A
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Reverse Recovery Time
t
RR
I
F
=8A, dI
F
/dt=100A/µs
Reverse Recovery Charge
Q
RR
Note: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300us,
duty cycle
≤2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board
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QW-R502-142.A
UTD410
TYPICAL CHARACTERISTICS
Power MOSFET
Continuous Drain Current, I
D
(A)
On-Resistance, R
DS(ON)
(mΩ)
On-Resistance vs. Gate-Source Voltage
170
150
130
110
90
70
50
30
10
0
3
4
6
8
10
Gate-Source Voltage, V
GS
(V)
25℃
125℃
I
D
=8A
Maximum Continuous Drain-Source Diode
Forward Current, I
S
(A)
190
On-Resistance, R
DS(ON)
(mΩ)
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
Normalized On-Resistance
Continuous Drain Current, I
D
(A)
Body-Diode Characteristics
125℃
25℃
0.2
0.4
0.6
0.8
1.0
1.2
Source-Drain Voltage, V
SD
(V)
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QW-R502-142.A
UTD410
TYPICAL CHARACTERISTICS(Cont.)
Gate-Charge Characteristics
10
Gate-Source Voltage, V
GS
(V)
V
DS
=15V
I
D
=8A
Capacitance (pF)
1400
1200
1000
C
ISS
Power MOSFET
Capacitance Characteristics
8
6
4
800
600
400
200
C
RSS
2
0
0
2
4
6
8
Total Gate Charge, Q
g
(nC)
C
OSS
0
0
5
10
15
20
25
30
Drain-Source Voltage, V
DS
(V)
Continuous Drain Current, I
D
(A)
Normalized Maximum Transient Thermal Impedance
10
Normalized Transient Thermal
Resistance, Z
θ
JA
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Power (W)
0.1
P
D
T
ON
Single Pulse
T
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
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QW-R502-142.A
UTD410
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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QW-R502-142.A
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