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UTD410-TN3-T

Description
Power Field-Effect Transistor, 8A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size183KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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UTD410-TN3-T Overview

Power Field-Effect Transistor, 8A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

UTD410-TN3-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)20 A
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

UTD410-TN3-T Preview

UNISONIC TECHNOLOGIES CO., LTD
UTD410
N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The
UTD410
can provide excellent R
DS(ON)
and low gate
charge by using advanced trench technology. This
UTD410
is
suitable for using as a load switch or in PWM applications.
Power MOSFET
FEATURES
* 30V/8A
* R
DS(ON)
=65mΩ @V
GS
=10 V
SYMBOL
2.Drain
*Pb-free plating product number: UTD410L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UTD410-TN3-R
UTD410L-TN3-R
UTD410-TN3-T
UTD410L-TN3-T
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-142.A
UTD410
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25℃, unless otherwise specified)
PARAMETER
Power MOSFET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
Continuous Drain Current
I
D
8
A
Pulsed Drain Current (Note1)
I
DM
20
Repetitive Avalanche Energy (L=0.1mH Note1)
E
AR
10
mJ
Power Dissipation
P
D
25
W
Junction Temperature
T
J
+175
Storage Temperature
T
STG
-55 ~ +175
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
SYMBOL
θ
JA
MIN
TYP
46
MAX
60
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate-Threshold Voltage
Drain-Source On-State Resistance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
V
GS
=0 V, I
D
=250µA
V
DS
=24V,V
GS
=0V
V
DS
=0 V, V
GS
= ±20V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=8A
V
GS
=4.5V, I
D
=2A
MIN
30
1
±100
1
1.8
48
75
288
57
39
3.7
3.7
15.6
2.6
6.72
0.76
1.78
0.75
1
4.3
12.6
5.1
3
65
105
TYP
MAX UNIT
V
µA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
ns
nC
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=15 V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
GS
=10V,V
DD
=15V, R
L
=1.8Ω,
R
G
=3Ω
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=15V, I
D
=8A
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=1A
Maximum Continuous Drain-Source
I
S
Diode Forward Current
Reverse Recovery Time
t
RR
I
F
=8A, dI
F
/dt=100A/µs
Reverse Recovery Charge
Q
RR
Note: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300us,
duty cycle
≤2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-142.A
UTD410
TYPICAL CHARACTERISTICS
Power MOSFET
Continuous Drain Current, I
D
(A)
On-Resistance, R
DS(ON)
(mΩ)
On-Resistance vs. Gate-Source Voltage
170
150
130
110
90
70
50
30
10
0
3
4
6
8
10
Gate-Source Voltage, V
GS
(V)
25℃
125℃
I
D
=8A
Maximum Continuous Drain-Source Diode
Forward Current, I
S
(A)
190
On-Resistance, R
DS(ON)
(mΩ)
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
Normalized On-Resistance
Continuous Drain Current, I
D
(A)
Body-Diode Characteristics
125℃
25℃
0.2
0.4
0.6
0.8
1.0
1.2
Source-Drain Voltage, V
SD
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-142.A
UTD410
TYPICAL CHARACTERISTICS(Cont.)
Gate-Charge Characteristics
10
Gate-Source Voltage, V
GS
(V)
V
DS
=15V
I
D
=8A
Capacitance (pF)
1400
1200
1000
C
ISS
Power MOSFET
Capacitance Characteristics
8
6
4
800
600
400
200
C
RSS
2
0
0
2
4
6
8
Total Gate Charge, Q
g
(nC)
C
OSS
0
0
5
10
15
20
25
30
Drain-Source Voltage, V
DS
(V)
Continuous Drain Current, I
D
(A)
Normalized Maximum Transient Thermal Impedance
10
Normalized Transient Thermal
Resistance, Z
θ
JA
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Power (W)
0.1
P
D
T
ON
Single Pulse
T
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-142.A
UTD410
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R502-142.A

UTD410-TN3-T Related Products

UTD410-TN3-T UTD410-TN3-R UTD410L-TN3-T UTD410L-TN3-R
Description Power Field-Effect Transistor, 8A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Power Field-Effect Transistor, 8A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Power Field-Effect Transistor, 8A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 Power Field-Effect Transistor, 8A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code TO-252 TO-252 TO-252 TO-252
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 4 4 4
Reach Compliance Code unknown unknown compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V
Maximum drain current (ID) 8 A 8 A 8 A 8 A
Maximum drain-source on-resistance 0.065 Ω 0.065 Ω 0.065 Ω 0.065 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252 TO-252 TO-252 TO-252
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 20 A 20 A 20 A 20 A
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
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