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VI40100C-E3

Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier
File Size161KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VI40100C-E3 Overview

Dual High Voltage Trench MOS Barrier Schottky Rectifier

V40100C-E3, VF40100C, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.38 V at I
F
= 5 A
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
V40100C
PIN 1
PIN 3
PIN 2
CASE
3
1
VF40100C
PIN 1
PIN 3
PIN 2
2
3
1
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-263AB
K
K
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
1
VB40100C
PIN 1
PIN 2
K
HEATSINK
MECHANICAL DATA
2
3
Case:
TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
VI40100C
PIN 1
PIN 3
PIN 2
K
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Diode variations
2 x 20 A
100 V
250 A
0.61 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Dual Common Cathode
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
T
J
, T
STG
V40100C
VF40100C VB40100C VI40100C
100
40
20
250
230
1.0
10 000
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
°C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy at T
J
= 25 °C, L = 90 mH
per diode
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Revision: 14-Nov-14
Document Number: 89042
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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