DRD630G60
Rectifier Diode
DS5987 – 1 January 2011 (LN28008)
KEY PARAMETERS
FEATURES
Double Side Cooling
High Surge Capability
V
RRM
I
F(AV)
I
FSM
6000V
630A
10500A
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
RRM
V
6000
5800
5600
5200
Conditions
DRD630G60
DRD630G58
DRD630G56
DRD630G52
V
RSM
= V
RRM
+100V
Outline type code: G
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DRD630G56
for a 5600V device
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DRD630G60
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
811
1274
1172
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
534
839
727
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
630
990
900
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
410
644
550
A
A
A
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DRD630G60
-3-
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
Surge (non-repetitive) on-state current
I t for fusing
2
2
Test Conditions
10ms half sine, T
case
= 150°C
V
R
= 50% V
RRM
- ¼ sine
10ms half sine, T
case
= 150°C
V
R
= 0
Max.
8.5
0.36
10.5
0.565
Units
kA
MA s
kA
MA s
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 12kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
11.5
Max.
0.032
0.064
0.064
0.008
0.016
160
150
175
13.5
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
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DRD630G60
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
Slope resistance
Test Conditions
At 1800A peak, T
case
= 25°C
At V
RRM,
T
case
= 150°C
I
F
= 1000A, dI
RR
/dt =3A/µs
T
case
= 150°C, V
R
=100V
At T
vj
= 150°C
At T
vj
= 150°C
Min.
-
-
-
-
-
-
Max.
2.1
75
3000
90
0.9
0.93
Units
V
mA
µC
A
V
m
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
A = 1.249986
B = -0.17646
C = 0.000524
D = 0.041024
these values are valid for T
j
= 150°C for I
F
500A to 2500A
Where
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DRD630G60
-5-
Fig.4 Total stored charge
Fig.5 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
150°C)
Fig.6 Maximum (limit) transient thermal impedance-
junction to case
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