UF2820P
RF Power MOSFET Transistor
20W, 100-500 MHz, 28V
Features
M/A-COM Products
Released;
RoHS Compliant
Package Outline
•
•
•
•
•
N-channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
Common source configuration
Lower noise floor
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
2.8
53
200
-55 to 150
3.3
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
100
300
500
Z
IN
(Ω)
9.5-j60.0
5.0-j35.0
2.0-j22.0
Z
LOAD
(Ω)
4.0+j68.0
40.0+j48.0
36.0+j34.0
V
DD
=28V, I
DQ
=200 mA, P
OUT
=20.0 W
Z
IN
is the series equivalent input impedance of the device from
gate to source.
Z
LOAD
is the optimum series equivalent load impedance as
measured from drain to ground.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
ŋ
D
VSWR-T
Min
65
-
-
2.0
.160
-
-
-
10
50
-
Max
-
2.0
2.0
6.0
-
14
10
4.8
-
-
20:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V
GS
= 0.0 V , I
DS
= 4.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 200.0 mA
V
DS
= 10.0 V , I
DS
200.0 mA ,
Δ
V
GS
= 1.0V, 80
μs
Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 200.0 mA, P
OUT
= 20.0 W F =500 MHz
V
DD
= 28.0 V, I
DQ
= 200.0 mA, P
OUT
= 20.0 W F =500 MHz
V
DD
= 28.0 V, I
DQ
= 200.0 mA, P
OUT
= 20.0 W F =500 MHz
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF2820P
RF Power MOSFET Transistor
20W, 100-500 MHz, 28V
Typical Broadband Performance Curves
CAPACITANCES
VS
VOLTAGE
F=1.0MHz
POPWER OUTPUT (W)
C
ISS
M/A-COM Products
Released;
RoHS Compliant
POWER OUTPUT
VS
VOLTAGE
P
IN
=1.0 W I
DQ
=200 mA P
OUT
=500 W
12
CAPACTANCES (pF)
10
8
30
25
20
15
10
5
0
5
C
OSS
6
4
C
RSS
2
0
5
10
15
V
DS
(V)
20
25
30
10
15
V
DD
(V)
20
25
30
GAIN
VS
FREQUENCY
V
DD
=28 V P
OUT
=20 W I
DQ
=200 mA
30
70
65
60
55
50
100
EFFICIENCY
VS
FREQUENCY
I
DD
=200 mA P
OUT
=20 W F =500 MHz
GAIN (dB)
20
10
0
100
200
300
400
500
EFFICIENCY (W)
200
300
400
500
FREQUENCY (MHz)
FREQUENCY (MHz)
POWER OUTPUT
VS
POWER INPUT
V
DD
=28 V I
DQ
=150 mA
20
POWER OUTPUT (W)
15
10
5
0
0.02
0.05
0.08
0.1
0.25
0.5
0.75
POWER INPUT (W)
100MHz
300MHz
500MHz
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF2820P
RF Power MOSFET Transistor
20W, 100-500 MHz, 28V
TEST FIXTURE SCHEMATIC
M/A-COM Products
Released;
RoHS Compliant
TEST FIXTURE ASSEMBLY
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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