An IATF 16949, ISO 9001 and ISO 14001 Certified Company
25A TRIACs
BTA24-600/800/1200/1600
TO-220A (Insulated)
PLASTIC PACKAGE
With high ability to withstand the shock loading of large current, BTA24 series triacs provide high dv/dt rate with strong
resistance to electromagnetic interface. With high commutation performances, 3 quadrants products especially
recommended focus on inductive load. From all three terminals to external heatsink itprovide a rated insulation voltage of
2500 V
RMS
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (T
j
=25°C)
Repetitive peak reverse voltage (T
j
=25°C)
Non repetitive surge peak off-state voltage
Non repetitive peak reverse voltage
RMS on-state current
Non repetitive surge peak on-state current (full cycle, F=50Hz)
I
2
t value for fusing (tp=10ms)
Critical rate of rise of on-state current (I
G
= 2 × I
GT
)
Peak gate current
Average gate power dissipation
Peak gate power
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
I
T(RMS)
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
P
GM
Value
-40 to 150
-40 to 125
600/800/1200/1600
600/800/1200/1600
V
DRM
+100
V
RRM
+100
25
250
340
50
4
1
10
Unit
o
C
o
C
V
V
V
V
A
A
A
2
s
A/µs
A
W
W
ELECTRICAL CHARACTERISTICS
(T
j
=25°C unless otherwise specified)
V
DRM
/V
RRM
: 600/800V
Parameter
Gate Trigger Current
Gate Trigger Voltage
Off-State Gate Voltage
Latching Current
Holding Current
Critical Rate of Rise of
Off-State Voltage
Test Condition
V
D
=12V, R
L
=33Ω
V
D
=V
DRM
, T
j
=125°C,
R
L
= 3.3KΩ
I
G
= 1.2 I
GT
I
T
= 100mA
V
D
= 2/3 V
DRM
, Gate
Open, T
j
=125°C
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
MAX
MAX
MIN
MAX
MAX
MIN
Quadrant
I-II-III
I-II-III
I-II-III
I-III
II
80
100
75
1000
Values
BTA24-600/800V
BW
CW
50
35
1.3
0.2
70
80
50
500
Unit
mA
V
V
mA
mA
V/µs
BTA24_ Rev_0 20082019EBJ
Continental Device India Pvt. Ltd.
Data Sheet
Page 1 of 5
Continental Device India Pvt. Limited
An IATF 16949, ISO 9001 and ISO 14001 Certified Company
V
DRM
/V
RRM
: 1200/1600V
Parameter
Gate Trigger Current
Gate Trigger Voltage
Off-State Gate Voltage
Latching Current
Holding Current
Critical Rate of Rise of
Off-State Voltage
V
DRM
/V
RRM
: 600/800V
Parameter
Gate Trigger Current
Gate Trigger Voltage
Off-State Gate Voltage
Latching Current
Holding Current
Critical Rate of Rise of
Off-State Voltage
Static Characteristics
Parameter
On-State Voltage
Off-State Leakage Current
V
D
=V
DRM
, T
j
=125°C,
R
L
= 3.3KΩ
I
G
= 1.2 I
GT
I
T
= 100mA
V
D
= 2/3 V
DRM
, Gate
Open, T
j
=125°C
Test Condition
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
MAX
MAX
MIN
MAX
MAX
MIN
Quadrant
I-II-III
IV
ALL
ALL
I-III-IV
II
80
100
75
500
Values
BTA24-600/800V
B
C
50
25
70
50
1.3
0.2
70
100
60
200
Unit
mA
V
V
mA
mA
V/µs
Test Condition
V
D
=12V, R
L
=33Ω
V
D
=V
DRM
, T
j
=125°C,
R
L
= 3.3KΩ
I
G
= 1.2 I
GT
I
T
= 100mA
V
D
= 2/3 V
DRM
, Gate
Open, T
j
=125°C
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
MAX
MAX
MIN
MAX
MAX
MIN
Quadrant
I-II-III
I-II-III
I-II-III
I-III
II
90
100
80
1500
Values
BTA24-1200/1600V
BW
CW
50
35
1.5
0.2
70
80
60
1000
Unit
mA
V
V
mA
mA
V/µs
V
D
=12V, R
L
=33Ω
Test Conditions
I
TM
=35A, tp=380μs
V
D
= V
DRM
,
V
R
= V
RRM
Symbol
V
TM
I
DRM
I
RRM
T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
Value
1.5
5
3
Unit
V
µA
mA
Thermal Resistance
Parameter
Maximum Thermal Resistance Junction to case (AC)
Device Name
BTA24 – xxx yy
xxx
600: V
DRM
/V
RRM
≥ 600V
800: V
DRM
/V
RRM
≥ 800V
1200: V
DRM
/V
RRM
≥ 1200V
1600: V
DRM
/V
RRM
≥ 1600V
yy
BW: I
GT I-III
≤ 50mA
CW: I
GT I-III
≤ 35mA
B: I
GT I-III
≤ 50mA I
GT IV
≤ 70mA
C: I
GT I-III
≤ 25mA I
GT IV
≤ 50mA
Symbol
R
th(j-c)
Value
1.5
Unit
ºC/W
BTA24_ Rev_0 20082019EBJ
Continental Device India Pvt. Ltd.
Data Sheet
Page 2 of 5
Continental Device India Pvt. Limited
An IATF 16949, ISO 9001 and ISO 14001 Certified Company
CHARACTERISTIC CURVES
BTA24_ Rev_0 20082019EBJ
Continental Device India Pvt. Ltd.
Data Sheet
Page 3 of 5
Continental Device India Pvt. Limited
An IATF 16949, ISO 9001 and ISO 14001 Certified Company
PACKAGE OUTLINE AND DIMENSIONS
BTA24_ Rev_0 20082019EBJ
Continental Device India Pvt. Ltd.
Data Sheet
Page 4 of 5
Continental Device India Pvt. Limited
An IATF 16949, ISO 9001 and ISO 14001 Certified Company
Customer Notes:
Component Disposal Instructions
1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to please dispose as per prevailing
Environmental Legislation of their Country
2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical and Electronic Equipment (WEEE).
DISCLAIMER
The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your
product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet
functionality parameters for your application. The information furnished in the Data Sheet and on the CDIL Web Site/CD is believed to be accurate
and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability
whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others.
These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual
Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Pvt. Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
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