1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
| Parameter Name | Attribute value |
| Number of terminals | 2 |
| Number of components | 1 |
| Processing package description | PLASTIC PACKAGE-2 |
| state | TRANSFERRED |
| packaging shape | ROUND |
| Package Size | LONG FORM |
| Terminal form | WIRE |
| terminal coating | TIN LEAD |
| Terminal location | AXIAL |
| Packaging Materials | PLASTIC/EPOXY |
| structure | SINGLE |
| Shell connection | ISOLATED |
| Diode component materials | SILICON |
| Diode type | SIGNAL DIODE |
| Maximum reverse recovery time | 0.0600 us |
| Maximum repetitive peak reverse voltage | 600 V |
| Maximum average forward current | 1 A |
| MUR160 | MUR105-160 | |
|---|---|---|
| Description | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 |
| Number of terminals | 2 | 2 |
| Number of components | 1 | 1 |
| Processing package description | PLASTIC PACKAGE-2 | PLASTIC PACKAGE-2 |
| state | TRANSFERRED | TRANSFERRED |
| packaging shape | ROUND | ROUND |
| Package Size | LONG FORM | LONG FORM |
| Terminal form | WIRE | WIRE |
| terminal coating | TIN LEAD | TIN LEAD |
| Terminal location | AXIAL | AXIAL |
| Packaging Materials | PLASTIC/EPOXY | PLASTIC/EPOXY |
| structure | SINGLE | SINGLE |
| Shell connection | ISOLATED | ISOLATED |
| Diode component materials | SILICON | SILICON |
| Diode type | SIGNAL DIODE | SIGNAL DIODE |
| Maximum reverse recovery time | 0.0600 us | 0.0600 us |
| Maximum repetitive peak reverse voltage | 600 V | 600 V |
| Maximum average forward current | 1 A | 1 A |