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MUR105-160

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
ManufacturerWINNERJOIN
Websitehttp://www.wej.cn/
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MUR105-160 Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

MUR105-160 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateTRANSFERRED
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingTIN LEAD
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0600 us
Maximum repetitive peak reverse voltage600 V
Maximum average forward current1 A

MUR105-160 Related Products

MUR105-160 MUR160
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals 2 2
Number of components 1 1
Processing package description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
state TRANSFERRED TRANSFERRED
packaging shape ROUND ROUND
Package Size LONG FORM LONG FORM
Terminal form WIRE WIRE
terminal coating TIN LEAD TIN LEAD
Terminal location AXIAL AXIAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE
Shell connection ISOLATED ISOLATED
Diode component materials SILICON SILICON
Diode type SIGNAL DIODE SIGNAL DIODE
Maximum reverse recovery time 0.0600 us 0.0600 us
Maximum repetitive peak reverse voltage 600 V 600 V
Maximum average forward current 1 A 1 A
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