BTA24, BTB24, BTA25, BTA26
and T25 series
Snuberrless™ and Standard 25 A Triacs
Main features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q
1
)
Value
25
600 and 800
35 to 50
Unit
A
V
mA
TO-220AB Insulated
(BTA24)
TO-220AB
(BTB24)
Description
Available either in through-hole or surface-mount
packages, the
BTA24, BTB24, BTA25, BTA26
and
T25
triac series is suitable for general
purpose AC switching. They can be used as an
ON/OFF function in applications such as static
relays, heating regulation, induction motor starting
circuits... or for phase control operation in light
dimmers, motor speed controllers, ...
The snubberless versions (BTA/BTB...W and T25
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V
RMS
) complying with UL standards
(File ref.: E81734).
RD91
(BTA25)
TOP3 Insulated
(BTA26)
Order codes
Part Number
BTA24-xxxxxRG
BTB24-xxxxxRG
BTA25-xxxxxRG
See
Table 6 on page 6
BTA26-xxxxxRG
T25xx-xxxG
G
A2
Marking
D
2
PAK
(T25-G)
T25xx-xxxG-TR
A1
2014-6-16
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BTA24, BTB24, BTA25, BTA26
and T25 series
Table 1.
Symbol
Absolute maximum ratings
Parameter
D
2
PAK /
TO-220AB
T
c
= 100° C
T
c
= 90° C
T
c
= 75° C
t = 20 ms
t = 16.7 ms
250
A
F = 60 Hz
t
p
= 10 ms
F = 120 Hz
t
p
= 10 ms
t
p
= 20 µs
T
j
= 125° C
T
j
= 25° C
T
j
= 125° C
T
j
= 125° C
260
340
50
V
DSM
/V
RSM
+ 100
4
1
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
V
A
W
°C
25
A
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
RD91 /
TOP3 Ins.
TO-220AB Ins.
I
TSM
I
²
t
dI/dt
V
DSM
/V
RSM
I
GM
P
G(AV)
T
stg
T
j
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25° C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
Table 2.
Electrical characteristics (T
j
= 25° C, unless otherwise specified), Snubberless™ and
Logic Level (3 quadrants) T25-G, BTA/BTB24...W, BTA25...W, BTA26...W
T25
BTA/BTB
Unit
T2535
CW
35
1.3
0.2
50
70
MAX.
II
T
j
= 125° C
T
j
= 125° C
MIN.
MIN.
80
500
13
80
500
13
100
1000
22
V/µs
A/ms
50
70
75
80
mA
BW
50
mA
V
V
mA
MAX.
MAX.
MIN.
MAX.
I - III
35
Test Conditions
Quadrant
I - II - III
I - II - III
I - II - III
Symbol
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
V
D
= 12 V R
L
= 33
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125° C
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open
Without snubber
1. minimum I
GT
is guaranted at 5% of I
GT
max.
2. for both polarities of A2 referenced to A1.
2014-6-16
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BTA24, BTB24, BTA25, BTA26
Table 3.
Symbol
I
GT (1)
V
GT
V
GD
I
H(2)
)
I
L
dV/dt
(2)
(dV/dt)c
(2)
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125° C
I
T
= 500 mA
I - III - IV
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open
(dI/dt)c = 13.3 A/ms
MAX.
II
T
j
= 125° C
T
j
= 125° C
MIN.
MIN.
160
500
10
V/µs
V/µs
Electrical characteristics (T
j
= 25° C, unless otherwise specified),
Standard (4 quadrants), BTB24...B, BTA25...B, BTA26...B
Test Conditions
Quadrant
I - II - III - IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
and T25 series
Value
50
100
1.3
0.2
80
70
mA
Unit
mA
V
V
mA
V
D
= 12 V
R
L
= 33
Ω
1. minimum I
GT
is guaranted at 5% of I
GT
max.
2. for both polarities of A2 referenced to A1.
Table 4.
Symbol
V
T (1)
V
t0 (1)
R
d (1)
I
DRM
I
RRM
Static characteristics
Test Conditions
I
TM
= 35 A
t
p
= 380 µs
T
j
= 25° C
T
j
= 125° C
T
j
= 125° C
T
j
= 25° C
T
j
= 125° C
MAX.
MAX.
MAX.
MAX.
3
mA
Value
1.55
0.85
16
5
Unit
V
V
mΩ
µA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
1. for both polarities of A2 referenced to A1.
Table 5.
Symbol
Thermal resistance
Parameter
D
2
PAK / TO-220AB
Value
0.8
1.1
1.7
45
50
60
° C/W
° C/W
Unit
R
th(j-c)
Junction to case (AC)
RD91 (Insulated) / TOP3 Insulated
TO-220AB Insulated
(1)
S
= 1 cm
²
D
2
PAK
TOP3 Insulated
TO-220AB / TO-220AB Insulated
R
th(j-a)
Junction to ambient
1. S = Copper surface under tab.
2014-6-16
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BTA24, BTB24, BTA25, BTA26
and T25 series
Figure 1.
Maximum power dissipation versus Figure 2.
RMS on-state current (full cycle)
I
T(RMS)
(A)
30
25
BTA24
RMS on-state current versus case
temperature (full cycle)
P(W)
30
25
20
15
10
5
BTB / T25
20
BTA25 / BTA26
15
10
5
I
T(RMS)
(A)
0
0
5
10
15
20
25
T
C
(°C)
0
0
25
50
75
100
125
Figure 3.
D
2
PAK RMS on-state current versus Figure 4.
ambient temperature (printed
circuit board FR4, copper
thickness: 35µm) (full cycle)
1E+0
D
2
PAK
(S=1cm
2
)
Relative variation of thermal
impedance versus pulse
duration
I
T(RMS)
(A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
1E-2
1E-1
K=[Z
th
/R
th
]
Z
th(j-c)
Z
th(j-a)
BTA / BTB24 / T25
Z
th(j-a)
BTA26
T
amb
(°C)
t
p
(s)
1E-3
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 5.
On-state characteristics
(maximum values)
Figure 6.
Surge peak on-state current
versus number of cycles
I
TM
(A)
300
T
j
max.
V
to
= 0.85V
R
d
= 16 m
Ω
T
j
= T
j
max.
I
TSM
(A)
300
250
t=20ms
100
200
Non repetitive
T
j
initial=25°C
One cycle
150
10
T
j
= 25°C.
100
50
1
0.5
1.0
1.5
2.0
Repetitive
T
C
=75°C
V
TM
(V)
2.5
3.0
3.5
4.0
4.5
Number of cycles
0
1
10
100
1000
2014-6-16
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BTA24, BTB24, BTA25, BTA26
and T25 series
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse with
width t
p
< 10 ms and corresponding
value of I
2
t
2
2
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
I
TSM
(A), I t (A s)
3000
dI/dt limitation:
50A/µs
T
j
initial=25°C
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
2.0
I
GT
I
TSM
I
2
t
1000
1.5
I
H
& I
L
1.0
0.5
t
p
(ms)
100
0.01
0.10
1.00
10.00
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
140
Figure 9.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
Figure 10. Relative variation of critical rate of
decrease of main current versus
(dV/dt)c
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
4
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
1.0
10.0
100.0
T2535/CW/BW
B
3
2
1
(dV/dt)c (V/µs)
0
0
25
50
T
j
(°C)
75
100
125
Figure 11. D
2
PAK Thermal resistance junction to
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35 µm)
R
th(j-a)
(°C/W)
80
70
60
50
40
30
20
10
0
0
4
8
12
16
20
24
28
32
36
40
D
2
PAK
S(cm²)
2014-6-16
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Embedded System
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