UM3010
N-Ch 30V Fast Switching MOSFETs
General Description
The UM3010 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UM3010 meet the RoHS and Green Product
requirement with full function reliability approved.
Product Summery
BV
DSS
30V
Applications
R
DS(ON)
45mΩ
ID
4.6A
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
Load Switch
SOP8 Pin Configuration
Absolute Maximum Ratings
Rating
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
P
D
@T
A
=70℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
2
Total Power Dissipation
4
Total Power Dissipation
4
1
1
10s
Steady State
30
±20
Units
V
V
6
4.8
18.4
2.5
1.6
-55 to 150
-55 to 150
4.6
3.7
1.5
0.94
A
A
A
W
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
1
1
Typ.
---
---
---
Max.
85
50
25
Unit
℃/W
℃/W
℃/W
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
1
UM3010
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=4A
V
GS
=4.5V , I
D
=2A
V
GS
=V
DS
, I
D
=250uA
V
DS
=24V , V
GS
=0V , T
J
=25℃
V
DS
=24V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=5V , I
D
=4A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=15V , V
GS
=4.5V , I
D
=4A
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
V
DD
=15V , V
GS
=10V , R
G
=3.3Ω
I
D
=4A
---
---
---
---
V
DS
=15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.016
38
56
1.5
-3.04
---
---
---
5.76
2.3
2.72
0.87
1.04
0.8
19.2
7.6
4
220
38
32
Max.
---
---
45
70
2.5
---
1
5
±100
---
4.6
3.81
1.22
1.46
1.6
34.6
15.2
8.0
308.0
53.2
44.8
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,4
1,4
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
7.2
1.4
Max.
4.6
18.4
1
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
I
F
=4A , dI/dt=100A/µs , T
J
=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UM3010
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
10
Fig.2 On-Resistance vs. G-S Voltage
8
I
S
Source Current(A)
6
4
T
J
=150℃
T
J
=25℃
2
0
0
V
SD
, Source-to-Drain Voltage (V)
0.3
0.6
0.9
1.2
Fig.3 Forward Characteristics of Reverse
1.5
Fig.4 Gate-Charge Characteristics
2.0
1
0.5
0
-50
Normalized On Resistance
Normalized V
GS(th)
1.5
1.0
0.5
T
J
,Junction Temperature (
℃)
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
UM3010
N-Ch 30V Fast Switching MOSFETs
1000
F=1.0MHz
Capacitance (pF)
Ciss
100
Coss
Crss
10
1
5
V
DS
Drain to Source Voltage(V)
9
13
17
21
25
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJA
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
P
DM
T
ON
T
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJA
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
Embedded System
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