UD0018
N-Ch 100V Fast Switching MOSFETs
General Description
The UD0018 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD0018 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Product Summery
BV
DSS
100V
Applications
R
DS(ON)
22mΩ
ID
45A
High Frequency Point-of-Load Synchronous
Buck Converter
Networking DC-DC Power System
LED TV Back Light
TO252 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
EAS
I
AS
P
D
@T
C
=25℃
P
D
@T
A
=70℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
1
Rating
100
±20
45
28
6.6
5.3
100
3
Units
V
V
A
A
A
A
A
mJ
A
W
W
℃
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
2
Single Pulse Avalanche Energy
Avalanche Current
Total Power Dissipation
4
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
1
98
41
90
2
-55 to 150
-55 to 150
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
62
1.4
Unit
℃/W
℃/W
1
UD0018
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
V
DD
=50V , V
GS
=10V , R
G
=3.3Ω,
I
D
=30A
V
DS
=80V , V
GS
=10V , I
D
=30A
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=30A
V
GS
=V
DS
, I
D
=250uA
V
DS
=80V , V
GS
=0V , T
J
=25℃
V
DS
=80V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=5V , I
D
=30A
V
DS
=0V , V
GS
=0V , f=1MHz
Min.
100
---
---
2.5
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.096
18
---
-5.5
---
---
---
27
1.9
27.6
11.4
7.9
15.6
17.2
16.8
9.2
1890
268
67
Max.
---
---
22
4.5
---
1
5
±100
---
3.8
38.6
16
11.1
31.2
31
33.6
18.4
2645
375
94
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=25V , L=0.1mH , I
AS
=30A
Min.
53
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,6
1,6
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
I
F
=30A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
34
47
Max.
45
100
1.2
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DS
=25V,V
GS
=10V,L=0.1mH,I
AS
=41A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UD0018
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
3
UD0018
N-Ch 100V Fast Switching MOSFETs
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJC
)
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.0001
0.001
0.01
0.1
P
DM
T
ON
T
D = T
ON
/T
T
J
peak = T
C
+ P
DM
x R
θJC
1
10
0.01
0.00001
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
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