UD04N65
機密
第
1
頁
N-Ch 650V Fast Switching MOSFETs
Product Summery
2011-03-14
-1-
General Description
The UD04N65 is the highest performance N-ch
MOSFETs with extreme high cell density , which
provide excellent RDSON and gate charge for
most of the synchronous buck converter
applications .
The UD04N65 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
BV
DSS
650V
Applications
R
DS(ON)
2.6
Ω
ID
4A
High efficient switched mode power supplies
Electronic lamp ballast
LCD TV/ Monitor
Adapter
TO252 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
EAS
I
AS
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
2
Single Pulse Avalanche Energy
Avalanche Current
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
3
1
Rating
650
±30
4
2.6
8
26.2
7
62.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Continuous Drain Current, V
GS
@ 10V
1
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
62
2
Unit
℃/W
℃/W
1
UD04N65
機密
第
2
頁
N-Ch 650V Fast Switching MOSFETs
2011-03-14
-2-
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V , V
GS
=0V , F=1MHz
V
DD
=300V , V
GS
=10V , R
G
=10Ω,
I
D
=1A
V
DS
=520V , V
GS
=10V , I
D
=1A
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=2A
V
GS
=V
DS
, I
D
=250uA
V
DS
=520V , V
GS
=0V , T
J
=25℃
V
GS
=±30V
, V
DS
=0V
V
DS
=15V , I
D
=2A
V
DS
=0V , V
GS
=0V , f=1MHz
Min.
650
---
---
2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.69
2.1
---
-8.2
---
---
3
3.4
18
4.9
6.1
11.2
18.8
29.2
29.2
775
56
3.8
Max.
---
---
2.6
5
---
2
±100
---
6.8
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
Ω
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=50V , L=1mH , I
AS
=4A
Min.
8.6
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,6
1,6
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
IF=1A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
195
580
Max.
4
8
1
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=50V,V
GS
=10V,L=1mH,I
AS
=7A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UD04N65
機密
第
3
頁
N-Ch 650V Fast Switching MOSFETs
2011-03-14
-3-
Typical Characteristics
5.5
I
D
=2A
4.5
R
DSON
(Ω)
3.5
2.5
1.5
4
6
V
GS
(V)
8
10
Fig.1 Typical Output Characteristics
3
Fig.2 On-Resistance vs. G-S Voltage
2.5
I
S
Source Current(A)
2
1.5
T
J
=150℃
1
0.5
T
J
=25℃
0
0.00
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
1.8
Fig.4 Gate-Charge Characteristics
2.8
Normalized V
GS(th)
(V)
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
2.2
1.6
1.0
0.4
T
J
,Junction Temperature (℃ )
-50
T
J
, Junction Temperature (℃)
0
50
100
150
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
UD04N65
機密
第
4
頁
N-Ch 650V Fast Switching MOSFETs
10.00
2011-03-14
-4-
10000
F=1.0MHz
1000
10us
100us
Ciss
1.00
Capacitance (pF)
I
D
(A)
100
Coss
0.10
10
10ms
100ms
DC
Crss
T
C
=25℃
Single Pulse
1
1
5
9
13
17
21
25
0.01
0.1
1
10
100
1000
10000
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJC
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
T
SINGLE
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4
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