STT3930N
Elektronische Bauelemente
3.5A , 30V , R
DS(ON)
58mΩ
Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R
DS(on)
and to
ensure minimal power loss and heat dissipation.
A
E
TSOP-6
L
6
5
4
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe TSOP-6
saves board space
Fast switching speed
High performance trench technology
1
2
3
B
F
DG
K
C
H
J
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
PACKAGE INFORMATION
Package
TSOP-6
MPQ
3K
Leader Size
7 inch
G
S
G
D
S
D
ABSOLUTE MAXIMUM RATINGS
(
T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
2
1
1
Symbol
V
DS
V
GS
T
A
=25°
C
T
A
=70°
C
I
DM
I
S
T
A
=25°
C
T
A
=70°
C
P
D
I
D
Ratings
30
±20
3.5
Unit
V
V
A
2.8
16
1.25
1.3
W
0.8
T
J
, T
STG
-55~150
°
C
A
A
Continuous Source Current (Diode Conduction)
Power Dissipation
1
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Junction to Ambient
1
t
≦
10 sec
Steady State
R
θ
JA
100
166
° /W
C
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2013 Rev. A
Page 1 of 2
STT3930N
Elektronische Bauelemente
3.5A , 30V , R
DS(ON)
58mΩ
Ω
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
1
Symbol
Min.
Typ.
Max.
Unit
V
nA
uA
A
m
S
V
Teat Conditions
V
DS
=V
GS
, I
D
=250uA
V
DS
=0, V
GS
=±20V
V
DS
=24V, V
GS
=0
V
DS
=24V, V
GS
=0, T
J
=55°C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=3.5A
V
GS
=4.5V, I
D
=3A
V
DS
=15V, I
D
=3.5A
I
S
=2.3A, V
GS
=0
Static
V
GS(th)
I
GSS
I
DSS
I
D(on)
1
1
-
-
-
6
-
-
-
-
-
-
-
-
-
6.9
0.8
2
-
±100
1
25
-
58
82
-
-
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1
R
DS(ON)
g
fs
V
SD
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
2.2
0.5
0.8
16
5
23
3
-
-
-
-
-
-
-
nS
nC
V
DS
=15V,
V
GS
=4.5V,
I
D
=3.5A
V
DD
=25V,
V
GEN
=10V,
R
L
=25 ,
I
D
=1A
Notes:
1. Pulse test: PW
≦
300us duty cycle
≦
2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Nov-2013 Rev. A
Page 2 of 2
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