BCR30AM-12LB
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
REJ03G0472-0300
Rev.3.00
Nov 30, 2007
Features
•
I
T(RMS)
: 30 A
•
V
DRM
: 600 V
•
I
FGT I
, I
RGT I
, I
RGT III
: 50 mA
•
Non-Insulated Type
•
Planar Passivation Type
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
4
2, 4
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
3
1
1
2
3
Applications
Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off
control of copier lamp
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
REJ03G0472-0300
Page 1 of 7
Rev.3.00
Nov 30, 2007
BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
GM
I
GM
Tj
Tstg
—
Ratings
30
300
378
5
0.5
10
2
– 40 to +150
– 40 to +150
4.8
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave,
Tc = 100°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th(j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
20/2
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
3.0/5.0
1.6
2.5
2.5
2.5
50
50
50
—
1.2
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Test conditions
Tj = 125°C/150°C, V
DRM
applied
Tc = 25°C, I
TM
= 45A
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C/150°C, V
D
= 1/2V
DRM
Junction to case
Note3
Tj = 125°C/150°C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.3°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
inductive load
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –16 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
REJ03G0472-0300
Page 2 of 7
Rev.3.00
Nov 30, 2007
BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Performance Curves
Maximum On-State Characteristics
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.5
1.0
500
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
400
Tj = 150°C
300
200
Tj = 25°C
100
0
10
0
1.5
2.0
2.5
3.0
3.5
4.0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
I
RGT I
, I
RGT III
V
GM
= 10V
P
G(AV)
=
0.5W
P
GM
= 5W
Gate Voltage (V)
10
1
7
5
V
GT
= 2.5V
3
2
10
0
7
5
3
2
I
GM
= 2A
I
FGT I
10
–1
7
I
FGT I
, I
RGT I
, I
RGT III
V
GD
= 0.1V
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
–
60
–
40
–
20 0 20 40 60 80 100 120 140160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–
60
–
40
–
20 0 20 40 60 80 100 120 140160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
REJ03G0472-0300
Page 3 of 7
Rev.3.00
Nov 30, 2007
BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Allowable Case Temperature vs.
RMS On-State Current
160
Maximum On-State Power Dissipation
50
On-State Power Dissipation (W)
40
360° Conduction
Resistive,
30
inductive loads
Case Temperature (°C)
30
40
140
120
100
Curves apply regardless
of conduction angle
80
60
40
20
10
0
0
10
20
50
360° Conduction
20
Resistive,
inductive loads
0
0
5 10 15 20
25
30
35
40
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
120
100
80
60
Curves apply
regardless of
40
conduction angle
Resistive,
20
inductive loads
Natural convection
0
0
5 10 15 20
Ambient Temperature (°C)
140
All fins are black painted
aluminum and greased
140
120
100
80
60
40
20
0
0
1
160
×
160
×
t2.3
120
×
120
×
t2.3
100
×
100
×
t2.3
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
25
30
35
40
2
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
5
7
Typical Example
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–
60
–
40
–
20 0 20 40 60 80 100120 140160
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Holding Current vs.
Junction Temperature
Typical Example
10
1
–
60
–
40
–
20 0 20 40 60 80 100120 140160
Junction Temperature (°C)
Junction Temperature (°C)
REJ03G0472-0300
Page 4 of 7
Rev.3.00
Nov 30, 2007
BCR30AM-12LB (The product guaranteed maximum junction temperature of 150°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
60
40
20
Typical Example
140
120
100
80
60
40
20
–
60
–
40
–
20
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
0
0 20 40 60 80 100120140160
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
1
10
I Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 150°C
Minimum
Characteristics
Value
III Quadrant
III Quadrant
I Quadrant
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500µs
V
D
= 200V
f = 3Hz
2 3
5 7 10
3
2 3
5 7 10
2
Rate of Rise of Off-State Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
10
2
Typical Example
7
Tj = 150°C
5
I = 4A
T
3
τ
= 500µs
2
V
D
= 200V
f = 3Hz
10
1
7
5
3
2
10
0
7
1
10
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
I
FGT I
I
RGT I
I
RGT III
III Quadrant
I Quadrant
Minimum
Characteristics
Value
2 3
5 7 10
2
2 3
5 7 10
3
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
REJ03G0472-0300
Page 5 of 7
Rev.3.00
Nov 30, 2007
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