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AH225-S8G

Description
400 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size2MB,21 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
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AH225-S8G Overview

400 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

AH225-S8G Parametric

Parameter NameAttribute value
Maximum input power26 dBm
Minimum operating frequency400 MHz
Maximum operating frequency2700 MHz
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Processing package descriptionHALOGEN FREE AND ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8
each_compliYes
EU RoHS regulationsYes
stateNRFND
Microwave RF TypeWIDE BAND MEDIUM POWER
Impedance characteristics50 ohm
structureCOMPONENT
Gain12.8 dB
jesd_609_codee4
terminal coatingNICKEL PALLADIUM GOLD
Maximum voltage standing wave ratio10
AH225
1W High Linearity InGaP HBT Amplifier
Applications
Repeaters
Base Station Transceivers
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / CDMA / WiMAX
SOIC-8 Package
Product Features
400-2700 MHz
15.5 dB Gain at 2140 MHz
+31 dBm P1dB
+46 dBm Output IP3
300 mA Quiescent Current
+5 V Single Supply
MTTF > 100 Years
Capable of handling 10:1 VSWR @ 5Vcc, 2.14 GHz,
31.5 dBm CW Pout or 23 dBm WCDMA Pout
Lead-free/RoHS-compliant SOIC-8 Package
Functional Block Diagram
General Description
The AH225 is a high dynamic range driver amplifier in a
low-cost surface-mount package. The InGaP/GaAs HBT
is able to achieve high performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +31.2 dBm of compressed 1dB power.
The integrated active bias circuitry in the devices enables
excellent stable linearity performance over temperature. It
is housed in a lead-free/RoHS-compliant SOIC-8 package.
All devices are 100% RF and DC tested.
The AH225 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH225 is ideal for the final stage
of small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a
wide variety of other applications within the 400 to 2700
MHz frequency band.
Pin Configuration
Pin #
1
2, 4, 5
3
6, 7
8
Backside Paddle
Symbol
Vbias
N/C
RF_in
RF_Out
Iref
RF/DC GND
Not Recommended for
New Designs
Recommended Replacement
Part: TQP7M9103
Ordering Information
Part No.
AH225-S8G
Description
1W High Linearity Amplifier
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev F 05/17/12
© 2012 TriQuint Semiconductor, Inc.
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1 of 21
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Disclaimer: Subject to change without notice
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AH225-S8G Related Products

AH225-S8G AH225-S8G_15
Description 400 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 400 MHz - 2700 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Maximum input power 26 dBm 26 dBm
Minimum operating frequency 400 MHz 400 MHz
Maximum operating frequency 2700 MHz 2700 MHz
Minimum operating temperature -40 Cel -40 Cel
Maximum operating temperature 85 Cel 85 Cel
Processing package description HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8 HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8
each_compli Yes Yes
EU RoHS regulations Yes Yes
state NRFND NRFND
Microwave RF Type WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
Impedance characteristics 50 ohm 50 ohm
structure COMPONENT COMPONENT
Gain 12.8 dB 12.8 dB
jesd_609_code e4 e4
terminal coating NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD
Maximum voltage standing wave ratio 10 10
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