ECG055B-G
InGaP HBT Gain Block
Applications
Wireless Infrastructure
CATV / SATV / MoCA
Point to Point
Defense & Aerospace
Test & Measurement Equipment
General Purpose Wireless
SOT-89 Package Style
Product Features
DC – 6 GHz
+18 dBm P1dB at 1 GHz
+34 dBm OIP3 at 1 GHz
20.5 dB Gain at 1 GHz
3.4 dB Noise Figure
Available in Lead-free / SOT-89 Package Style
Internally matched to 50 Ω
Functional Block Diagram
General Description
The ECG055B-G is a general-purpose buffer amplifier
that offers high dynamic range in a low-cost surface-
mount package. At 1000 MHz, the ECG055B-G typically
provides 20.5 dB of gain, +34 dBm Output IP3, and
+18 dBm P1dB.
The ECG055B-G consists of Darlington pair amplifiers
using the high reliability InGaP / GaAs HBT process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
The device is ideal for wireless applications and is
available in low-cost, surface-mountable plastic
lead-free / RoHS-compliant
SOT-89
packages.
A
SOT-86 version is also available as the ECG055C. All
devices are 100% RF and DC tested.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless
technologies such as GPRS, GSM, CDMA, and W-
CDMA. In addition, the ECG055B-G will work for other
various applications within the DC to 6 GHz frequency
range such as CATV and mobile wireless.
Pin Configuration
Pin No.
1
2
3
Backside Paddle
Label
RF IN
GND
RF OUT / V
CC
GND
Ordering Information
Part No.
ECG055B-G
Description
InGaP HBT Gain Block
Standard T/R size = 1000 pieces on a 7” reel
Datasheet: Rev B 12/07/14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
ECG055B-G
InGaP HBT Gain Block
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power (Continuous)
Device Current
Recommended Operating Conditions
Parameter
T
CASE
Junction Temperature
Rating
−65
to 150 °C
+12 dBm
150 mA
Min
−40
Typ
Max Units
+85
+160
°C
°C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted:
V
SUPPLY
= +6 V, R
BIAS
= 18 Ω, Temp.=+25 °C, 50 Ω System
Parameter
Operational Bandwidth
Gain
Output P1dB
Output IP3
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
Device Voltage
Device Current
Thermal Resistance
Conditions
Freq.=1000 MHz
Pout=+4 dBm / Tone,
Δf = 1 MHz
Min
DC
Typ
20.5
+18
+34
20.1
20
12.5
+18
+32
3.4
+4.8
65
128
Max
6000
Units
MHz
dB
dBm
dBm
19.3
Freq.=2000 MHz
Pout=+4 dBm / Tone,
Δf = 1 MHz
+30
+4.2
21
dB
dB
dB
dBm
dBm
4
+5.3
dB
V
mA
°C / W
Typical Device RF Performance
(1)
Test conditions unless otherwise noted:
V
SUPPLY
= +6 V, I
CC
= 65 mA (typ.), R
BIAS
= 18 Ω, Temp.=+25 °C, 50 Ω System
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
100
20.7
36
27
+18.2
+33
3.4
500
20.6
31
23
+18
+33.5
3.6
900
20.5
26.3
19.1
+18.1
+34.5
3.4
Typical
1900
20.1
19.7
12.9
+18.2
+33.5
3.4
2140
20.1
18.5
12.2
+17.8
+32.9
3.4
2400
19.9
17.5
11
+17.8
+32
3.8
3500
19.3
14
8.1
+17.2
5800
17.2
8.9
4.1
Units
MHz
dB
dB
dB
dBm
dBm
dB
Notes:
1. Gain and return loss values presented above, and in the plots of the following section, are measured at the device level.
Application specific performance values will differ in accordance with external components selected for the desired frequency
band of operation. P1dB, OIP3 and NF data is measured using the application circuit shown on page 4.
2. Pout= +4 dBm / tone, 1 MHz tone spacing.
Datasheet: Rev B 12/07/14
© 2014 TriQuint
-
2 of 7
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Disclaimer: Subject to change without notice
www.triquint.com
ECG055B-G
InGaP HBT Gain Block
Typical Device RF Performance
(1)
Test conditions unless otherwise noted:
V
SUPPLY
= +6 V, I
CC
= 65 mA (typ.), R
BIAS
= 18 Ω, Temp.=+25 °C, 50 Ω System
22
20
18
Gain vs. Frequency
Temp.=+25°C
0
Return Loss vs. Frequency
Temp.=+25°C
Icc vs. Vde
160
120
-5
|S11|, |S22| (dB)
|S21| (dB)
-10
|S11|
Icc (mA)
|S22|
16
14
12
10
0
1000
2000
3000
4000
5000
6000
80
40
-15
-20
25°C
0
4.0
0
1000
2000
3000
4000
5000
6000
-25
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
Frequency (MHz)
Frequency (MHz)
Vde (V)
40
OIP3 vs. Frequency
+85°C
+25°C
−40°C
20
P1dB vs. Frequency
5.0
4.5
Noise Figure vs. Frequency
Temp.=+25°C
35
18
4.0
+25°C
−40°C
P1dB (dBm)
OIP3 (dBm)
NF (dB)
+85°C
30
3.5
3.0
2.5
16
25
20
1
2
14
2.0
Frequency (MHz)
3
4
1
2
3
4
800
1000
1200
1400
1600
1800
2000
Frequency (MHz)
Frequency (MHz)
Notes:
1. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by
external components shown in the application circuit.
Typical Device S-Parameters
Test Conditions:
V
DEVICE
= +4.8 V, I
CC
= 65 mA, Temp. = 25 °C, Calibrated to device leads
Freq (MHz)
50
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
S11 (dB)
−35.44
−31.06
−25.99
−21.96
−19.74
−17.50
−15.68
−14.02
−12.75
−11.62
−10.22
−9.77
−8.35
S11 (ang)
−155.39
−130.40
−134.19
−143.12
−147.93
−165.99
177.82
162.84
145.85
126.85
104.39
89.88
70.44
S21 (dB)
20.70
20.64
20.51
20.33
20.14
19.92
19.65
19.32
18.96
18.62
17.97
17.42
16.85
S21 (ang)
178.22
160.99
142.21
123.40
104.91
86.66
68.34
49.37
30.89
11.81
−7.65
−25.15
−45.49
S12 (dB)
−22.72
−22.79
−22.57
−22.41
−22.25
−21.53
−21.19
−20.96
−20.43
−20.02
−19.54
−19.65
−19.44
S12 (ang)
0.33
−4.72
−10.86
−17.52
−24.67
−31.23
−38.23
−46.84
−55.87
−64.61
−74.66
−86.77
−101.04
S22 (dB)
−27.17
−23.11
−18.21
−14.71
−12.69
−10.92
−9.29
−8.13
−7.17
−5.98
−5.08
−4.74
−3.88
S22 (ang)
−13.13
−72.28
−103.46
−126.14
−147.96
−167.56
174.99
153.30
137.75
117.77
96.84
83.19
62.30
Notes:
1. Device S-parameters are available for download off of the website at: www.TriQuint.com
Datasheet: Rev B 12/07/14
© 2014 TriQuint
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ECG055B-G
InGaP HBT Gain Block
Recommended Application Circuit
Vcc
Icc = 65 mA
R4
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 µF
L1
RF Choke
RF IN
ECG055
C1
Blocking
Capacitor
C2
Blocking
Capacitor
RF OUT
Notes:
1. See Evaluation Board PCB Information section for material and stack-up.
Bill of Material
Reference Des.
L1
C1, C2
C3
C4
R4
Value
39 nH
56 pF
0.018
F
Do Not Place
18 Ω
Description
Wirewound Inductor, 0603
Chip Capacitor, 0603
Chip Capacitor, 0603
1% tolerance, 0805
Recommended Component Values
Frequency (MHz)
L1
C1, C2, C3
50
820 nH
.018 μF
500
220 nH
1000 pF
900
68 nH
100 pF
1900
27 nH
68 pF
2200
22 nH
68 pF
2500
18 nH
56 pF
3500
15 nH
39 pF
Recommended Bias Resistor Values
V
SUPPLY
(V)
R4 (Ω)
Component Size
6
18.5
0805
7
33.8
1210
8
49
1210
9
65
2010
10
80
2010
12
111
2512
Notes:
1. The proper value for R4 is dependent upon the supply voltage and allows for bias stability over temperature. TriQuint
recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended.
Datasheet: Rev B 12/07/14
© 2014 TriQuint
-
4 of 7
-
Disclaimer: Subject to change without notice
www.triquint.com
ECG055B-G
InGaP HBT Gain Block
Pin Configuration and Description
Backside Paddle - GND
1
RF IN
2
GND
3
RF OUT / V
CC
Pin No.
1
3
Label
RF IN
RF OUT / V
CC
Description
RF input, matched to 50 ohms. External DC Block is required.
RF output / DC supply, matched to 50 ohms. External DC Block, bias choke,
and dropping resistor is required.
RF/DC ground. Use recommended via pattern to minimize inductance and
thermal resistance. See PCB Mounting Pattern for suggested footprint.
2, Backside Paddle GND Paddle
Evaluation Board PCB Information
TriQuint PCB 1069124 Material and Stack-up
1 oz. Cu top layer
0.014"
0.062" ± 0.006"
Finished Board
Thickness
Nelco N-4000-13
1 oz. Cu inner layer
Core
1 oz. Cu inner layer
0.014"
Nelco N-4000-13
1 oz. Cu bottom layer
50 Ohm Line Dimensions: Width=0.028"
Spacing=0.036"
Datasheet: Rev B 12/07/14
© 2014 TriQuint
-
5 of 7
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Disclaimer: Subject to change without notice
www.triquint.com
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