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T1G4020036-FLEVB1

Description
2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
File Size2MB,21 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
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T1G4020036-FLEVB1 Overview

2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor

T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Applications
Military radar
Civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
Frequency: DC to 3.5 GHz
Output Power (P
3dB
): 260 W Peak
(48 Watts Avg.) at 2.9 GHz
Linear Gain: 16 dB typical at 2.9 GHz
Operating Voltage: 36 V
Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T1G4020036-FL is a 240 W Peak (48 W
Avg.) (P
3dB
) discrete GaN on SiC HEMT which operates
from DC to 3.5 GHz. The device is constructed with
TriQuint’s proven TQGaN25HV process, which features
advanced field plate techniques to optimize power and
efficiency at high drain bias operating conditions. This
optimization can potentially lower system costs in terms
of fewer amplifier line-ups and lower thermal
management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1, 4
2, 5
Flange
Label
V
D
/ RF OUT
V
G
/ RF IN
Source
Ordering Information
Part
T1G4020036-FL
T1G4020036-FL-
EVB1
ECCN
3A001b.3.b
EAR99
Description
Packaged part
Flangeless
2.9-3.3 GHz
Evaluation Board
Datasheet: Rev B 11-24-14
© 2014 TriQuint
- 1 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com

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T1G4020036-FLEVB1 T1G4020036-FL
Description 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor
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