T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Applications
•
•
•
•
•
•
Military radar
Civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
•
Frequency: DC to 3.5 GHz
•
Output Power (P
3dB
): 260 W Peak
(48 Watts Avg.) at 2.9 GHz
•
Linear Gain: 16 dB typical at 2.9 GHz
•
Operating Voltage: 36 V
•
Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T1G4020036-FL is a 240 W Peak (48 W
Avg.) (P
3dB
) discrete GaN on SiC HEMT which operates
from DC to 3.5 GHz. The device is constructed with
TriQuint’s proven TQGaN25HV process, which features
advanced field plate techniques to optimize power and
efficiency at high drain bias operating conditions. This
optimization can potentially lower system costs in terms
of fewer amplifier line-ups and lower thermal
management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1, 4
2, 5
Flange
Label
V
D
/ RF OUT
V
G
/ RF IN
Source
Ordering Information
Part
T1G4020036-FL
T1G4020036-FL-
EVB1
ECCN
3A001b.3.b
EAR99
Description
Packaged part
Flangeless
2.9-3.3 GHz
Evaluation Board
Datasheet: Rev B 11-24-14
© 2014 TriQuint
- 1 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Absolute Maximum Ratings
Parameter
Breakdown Voltage (BV
DG
)
Gate Voltage Range (V
G
)
Drain Current (I
D
)
Gate Current (I
G
)
Power Dissipation (CW P
D
)
RF Input Power, CW,
T = 25° (P
IN
)
C
Channel Temperature (T
CH
)
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
Parameter
Drain Voltage (V
D
)
Drain Quiescent Current (I
DQ
)
Peak Drain Current ( I
D
),
Pulse
Gate Voltage (V
G
)
Channel Temperature (T
CH
)
Power Dissipation (P
D
), CW, 85° Tbase
C
Power Dissipation (P
D
), Pulse, 85°
C
Tbase
Value
145 V min.
-10 to 0 V
24 A
-57.6 to 67.2 mA
236 W
47.5 dBm
275 °
C
320 °
C
-40 to 150 °
C
Value
36 V (Typ.)
520 mA (Typ.)
12 A (Typ.)
-2.9 V (Typ.)
250 ° (Max.)
C
211 W (Max)
374 W (Max)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Pulse signal: 100uS pulse width, 20% duty cycle
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
RF Characterization – Load Pull Performance at 3.1 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 36 V, I
DQ
= 260 mA (half device)
C,
Symbol Parameter
G
LIN
P
3dB
PAE
3dB
G
3dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
Power-Added Efficiency at 3 dB Gain Compresion,
Efficiency Tuned
Gain at 3 dB Compression, Power Tuned
Min
Typical
16.1
155
64
13.1
Max
Units
dB
W
%
dB
Notes:
1. Pulse: 100µs pulse width, 20% duty cycle
RF Characterization – Load Pull Performance at 3.5 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 36 V, I
DQ
= 260 mA (half device)
C,
Symbol Parameter
G
LIN
P
3dB
PAE
3dB
G
3dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
Gain at 3 dB Compression, Power Tuned
Min
Typical
16.8
140
58.5
13.8
Max
Units
dB
W
%
dB
Notes:
1. Pulse: 100µs pulse width, 20% duty cycle
Datasheet: Rev B 11-24-14
© 2014 TriQuint
- 2 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
RF Characterization – Narrow Band Performance at 2.9 GHz
(1,2,3)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 36 V, I
DQ
= 520 mA (combined), Pulsed
C,
Symbol Parameter
VSWR
Impedance Mismatch Ruggedness
Typical
10:1
Notes:
1. Performance at 2.9 GHz in the 2.9 to 3.3 GHz Evaluation Board
2. Pulse: 100µs, 20%
3. Tested input power established at P3dB at power match condition
RF Characterization – Performance at 2.9 GHz
(1, 2)
Test conditions unless otherwise noted: T
A
= 25 ° V
D
= 36 V, I
DQ
= 520 mA (combined)
C,
Symbol Parameter
G
LIN
P
3dB
DE
3dB
G
3dB
Linear Gain
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
Min
Typical
16.1
260.0
52.0
13.1
Max
Units
dB
W
%
dB
Notes:
1. Performance at 2.9 GHz in the 2.9 to 3.3 GHz Evaluation Board
2. Pulse: 100µs, 20%
Datasheet: Rev B 11-24-14
© 2014 TriQuint
- 3 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Thermal and Reliability Information
Parameter
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
)
Notes:
Thermal resistance measured to bottom of package.
Test Conditions
Tbase = 85° Pdiss = 211W
C,
CW
Tbase = 85° Pdiss = 230.4W
C,
Pulse: 100uS, 20%
Tbase = 85° Pdiss = 230.4W
C,
Pulse: 100uS, 10%
Tbase = 85° Pdiss = 230.4W
C,
Pulse: 300uS, 20%
Tbase = 85° Pdiss = 230.4W
C,
Pulse: 300uS, 10%
Value
0.78
250
0.40
177
0.36
168
0.47
194
0.43
185
Units
°
C/W
°
C
°
C/W
°
C
°
C/W
°
C
°
C/W
°
C
°
C/W
°
C
Median Lifetime
Datasheet: Rev B 11-24-14
© 2014 TriQuint
- 4 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
T1G4020036-FL
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Maximum Channel Temperature
T
BASE
= 85° P
D
= 230 W
C,
Maximum Channel Temperature
Tbase = 85
o
C, Pdiss = 230 W
280.0
260.0
Maximum Channel Temperature (
o
C)
240.0
220.0
200.0
180.0
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
160.0
140.0
120.0
100.0
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
1.00E+00
Pulse Width (sec)
Datasheet: Rev B 11-24-14
© 2014 TriQuint
- 5 of 21 -
Disclaimer: Subject to change without notice
www.triquint.com
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