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SSE04N60SL_15

Description
N-Ch Enhancement Mode Power MOSFET
File Size562KB,5 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet View All

SSE04N60SL_15 Overview

N-Ch Enhancement Mode Power MOSFET

SSE04N60SL
Elektronische Bauelemente
4A , 600V , R
DS(ON)
2.4
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSE04N60SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R
DS(on)
and gate charge for most of the synchronous
buck converter applications .
TO-220P
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
2
Drain
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
9.3
10.6
14.2
16.5
2.7 BSC.
12.6
14.7
1.0
1.8
0.4
1.0
3.6
4.8
REF.
H
I
J
K
L
M
Millimeter
Min.
Max.
2.54 BCS.
1.8
2.9
2.6
3.95
0.3
0.6
5.8
7.0
1.2
1.45
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Single Pulse Avalanche Energy
1
Symbol
V
DS
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
T
C
=25°
C
Derate above 25°
C
E
AS
T
J
, T
STG
P
D
Rating
600
±30
4
2.5
16
100
0.8
217
-55~150
Unit
V
V
A
A
A
W
mJ
°
C
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
Notes:
1. L=30mH,I
AS
=3.45A, V
DD
=155V, R
G
=25 , Starting T
J
=25°
C
R
θJA
R
θJC
62.5
1.25
° /W
C
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
17-Jul-2014 Rev. A
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