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PD44324092BF5-E50-FQ1

Description
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
File Size472KB,37 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

PD44324092BF5-E50-FQ1 Overview

36M-BIT DDR II SRAM 2-WORD BURST OPERATION

Datasheet
μ
PD44324092B
μ
PD44324182B
μ
PD44324362B
36M-BIT DDR II SRAM
2-WORD BURST OPERATION
Description
The
μ
PD44324092B is a 4,194,304-word by 9-bit, the
μ
PD44324182B is a 2,097,152-word by 18-bit and the
μ
PD44324362B is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with
advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44324092B,
μ
PD44324182B and
μ
PD44324362B integrate unique synchronous peripheral circuitry
and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the
positive edge of K and K#. These products are suitable for application which require synchronous operation,
high speed, low voltage, high density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
R10DS0036EJ0200
Rev.2.00
August 2, 2011
Features
1.8
±
0.1 V power supply
165-pin PLASTIC BGA (15 x 17)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Pipelined double data rate operation
Common data input/output bus
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 20
μ
s after clock is resumed.
User programmable impedance output (35 to 70
Ω)
Fast clock cycle time : 3.3 ns (300 MHz), 3.5ns (287MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
R10DS0036EJ0100 Rev.2.00
August 2, 2011
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