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RJK6018DPK_15

Description
600 V - 30 A - MOS FET High Speed Power Switching
File Size74KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJK6018DPK_15 Overview

600 V - 30 A - MOS FET High Speed Power Switching

Preliminary
Datasheet
RJK6018DPK
600 V - 30 A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.2
typ. (at I
D
= 15 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0495EJ0200
(Previous: REJ03G1537-0100)
Rev.2.00
Jul 22, 2011
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
3. STch = 25C, Tch
150C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
I
DR
Note1
I
DR (pulse)
Note3
I
AP
Note3
E
AR
Pch
Note2
ch-c
Tch
Tstg
Note1
Ratings
600
±30
30
90
30
90
6
1.9
200
0.625
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0495EJ0200 Rev.2.00
Jul 22, 2011
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