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SMS501DE_15

Description
N-Ch Enhancement Mode Power MOSFET
File Size434KB,4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet View All

SMS501DE_15 Overview

N-Ch Enhancement Mode Power MOSFET

SMS501DE
Elektronische Bauelemente
0.03A , 600V , R
DS(ON)
700
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SMS501DE is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R
DS(on)
and gate charge for most of the synchronous
buck converter applications .
1
SOT-23
A
L
3
3
Top View
2
C B
1
2
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
K
E
D
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
2.70
3.10
2.10
2.65
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.35
0.65
0.08
0.20
0.6 REF.
0.95 BSC.
J
MARKING
501DE
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
T
C
=25°
C
Derate above 25°
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
T
C
=25°
C
T
C
=100°
C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
Rating
600
±20
0.03
0.024
0.12
0.5
0.004
-55~150
Unit
V
V
A
A
A
W
°
C
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
R
θJA
R
θJC
250
50
° /W
C
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2013 Rev. A
Page 1 of 4
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