SMG2306A
Elektronische Bauelemente
5 A, 30 V, R
DS(ON)
35 mΩ
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The SMG2306A is universally used for all commercial-industrial
applications.
FEATURES
Capable of 2.5V gate drive
Lower on-resistance
PACKAGE DIMENSIONS
A
L
Drain
B
Top View
C
Gate
Source
F
G
H
K
M
J
REF.
A
B
C
D
E
F
E
D (Typ.)
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
,VGS@4.5V
Drain Current
3
,VGS@4.5V
Pulsed Drain Current
1,
Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@Ta=25℃
I
D
@Ta=70℃
I
DM
P
D
@Ta=25℃
Tj, Tstg
Ratings
30
±12
5
4
20
1.38
-55 ~ +150
0.01
Unit
V
V
A
A
A
W
℃
W/℃
Linear Derating Factor
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rthj-a
Value
90
Unit
℃/W
01-June-2005 Rev. B
Page 1 of 4
SMG2306A
Elektronische Bauelemente
5 A, 30 V, R
DS(ON)
35 mΩ
N-Channel Enhancement Mode Power Mos.FET
ELECTRICAL CHARACTERISTICS
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
△
Symbol
BV
DSS
BV
DSS
/
△
Tj
Min.
30
-
0.5
-
-
-
-
-
Typ.
-
0.1
-
13
-
-
-
-
-
-
-
8.5
1.5
3.2
6
20
20
3
660
90
70
Max.
-
-
1.2
-
±100
1
25
30
35
50
90
15
-
-
-
-
-
-
1050
-
-
Unit
V
V/
℃
V
S
nA
uA
uA
Test Conditions
V
GS
=0, I
D
=250uA
Reference to 25
℃
, I
D
=1mA
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5A
V
GS
= ±12V
V
DS
=30V, V
GS
=0
V
DS
=24V, V
GS
=0
V
GS
=10V, I
D
=5A
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25
℃
)
Drain-Source Leakage Current(Tj=70
℃
)
V
GS(th)
g
fs
I
GSS
I
DSS
Static Drain-Source On-Resistance
R
DS(ON)
-
-
-
mΩ
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=2.6A
V
GS
=1.8V, I
D
=1.0A
I
D
=5A
V
DS
=16V
V
GS
=4.5V
V
DS
=15V
I
D
=5A
V
GS
=10V
R
G
=3.3Ω
R
D
=3Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
nC
ns
pF
SOURCE-DRAIN DIODE
Parameter
Forward On Voltage
2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
V
SD
T
rr
Q
rr
Min.
-
-
-
Typ.
-
14
7
Max.
1.2
-
-
Unit
V
ns
nC
Test Conditions
I
S
=1.2A, V
GS
=0
I
S
=5A, V
GS
=0V
dI/dt=100A/us
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width
≦
300us, duty cycle
≦
2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.
01-June-2005 Rev. B
Page 2 of 4
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