IRLR2905Z
IRLU2905Z
D
Features
●
●
●
●
●
●
V
DSS
= 55V
G
S
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
R
DS(on)
= 13.5mΩ
I
D
= 42A
Description
Specifically designed for Automotive applications, thi
MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRLR2905Z
I-Pak
IRLU2905Z
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
Max.
60
43
42
240
110
Units
A
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
W
W/°C
V
mJ
A
mJ
d
0.72
± 16
I
AR
E
AR
T
J
T
STG
Avalanche Current
Ã
h
57
85
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
y
y
j
Parameter
Typ.
Max.
1.38
40
110
Units
°C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
ij
1
–––
–––
–––
2014-8-16
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IRLR/U2905Z
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Min. Typ. Max. Units
55
–––
–––
–––
–––
–––
0.053
11
–––
–––
–––
–––
–––
–––
–––
–––
23
8.5
12
14
130
24
33
4.5
7.5
1570
230
130
840
180
290
–––
–––
13.5
20
22.5
3.0
–––
20
250
200
-200
35
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 36A
mΩ V
GS
= 5.0V, I
D
= 30A
mΩ
V
S
µA
V
GS
= 4.5V, I
D
e
e
= 15A
e
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
1.0
25
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 36A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 36A
V
DS
= 44V
V
GS
= 5.0V
V
DD
= 28V
I
D
= 36A
R
G
= 15
Ω
V
GS
= 5.0V
e
e
D
G
S
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
22
14
42
A
240
1.3
33
21
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 36A, V
GS
= 0V
T
J
= 25°C, I
F
= 36A, V
DD
= 28V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-16
2
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IRLR/U2905Z
1000
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1000
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
3.0V
≤
60µs PULSE WIDTH
Tj = 175°C
3.0V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
100
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
60
T J = 25°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
50
40
T J = 175°C
100.0
T J = 175°C
30
20
T J = 25°C
10.0
VDS = 10V
≤
60µs PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
10
VDS = 8.0V
380µs PULSE WIDTH
0
10
20
30
40
50
0
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
2014-8-16
3
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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IRLR/U2905Z
2500
VGS, Gate-to-Source Voltage (V)
2000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12
10
8
6
4
2
0
ID= 36A
VDS= 44V
VDS= 28V
VDS= 11V
C, Capacitance (pF)
Ciss
1500
1000
500
Coss
Crss
0
1
10
100
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0
T J = 175°C
100
10.0
T J = 25°C
1.0
VGS = 0V
0.1
0.2
0.6
1.0
1.4
1.8
2.2
VSD, Source-to-Drain Voltage (V)
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
2014-8-16
4
Fig 8.
Maximum Safe Operating Area
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IRLR/U2905Z
60
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
LIMITED BY PACKAGE
50
ID , Drain Current (A)
ID = 30A
VGS = 5.0V
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
τ
J
τ
J
τ
1
0.1
R
1
R
1
τ
2
R
2
R
2
τ
C
τ
τ
2
Ri (°C/W)
τi
(sec)
0.765
0.000269
0.6141
0.001614
τ
1
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-16
5
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