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IRFW540

Description
Advanced Power MOSFET
File Size232KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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IRFW540 Overview

Advanced Power MOSFET

Advanced Power MOSFET
FEATURES
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
175℃ Operating Temperature
n
Lower Leakage Current : 10
μA
(Max.) @ V
DS
= 100V
n
Lower R
DS(ON)
: 0.041
Ω
(Typ.)
IRFW/I540A
BV
DSS
= 100 V
R
DS(on)
= 0.052
Ω
I
D
= 28 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25℃)
Continuous Drain Current (T
C
=100℃)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25℃) *
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
Value
100
28
19.8
110
±20
523
28
10.7
6.5
3.8
107
0.71
- 55 to +175
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/℃
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
1.4
40
62.5
℃/W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
2001
Fairchild Semiconductor Corporation
1

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