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SS24

Description
RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size93KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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SS24 Overview

RECTIFIER DIODE

SS24 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typerectifier diode
SS22-SS210
2.0A Surface Mount Schottky Barrier Rectifier
Features
·
The plastic package carries Underwriters Laboratory
·
·
·
·
·
·
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
B
Dim
SMB
Min
3.30
4.00
1.95
0.15
5.00
0.10
0.76
2.00
Max
3.94
4.65
2.21
0.40
6.00
0.20
1.52
2.62
A
B
C
D
E
G
H
J
A
C
Mechanical Data
·
Case:
JEDEC DO-214AA molded plastic body
·
Terminals:
leads solderable per MIL-STD-750,
Method 2026
·
Polarity
: Color band denotes cathode end
·
Mounting Position
: Any
D
J
H
G
E
All Dimensions in mm
·
Weight:0.005
ounce, 0.138 grams
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, halfwave, 60Hz resistive or inductive load.
SYMBOLS
SS22
SS23
SS24
SS25
SS26
SS28 SS210
UNITS
VOLTS
VOLTS
VOLTS
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
2.0
60
42
60
80
56
80
100
70
100
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
,
T
STG
0.55
20
220
-65 to +125
50.0
0.70
0.5
10
180
75.0
-65 to +150
-65 to +150
0.85
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
1 of 2

SS24 Related Products

SS24 SS210 SS26 SS28 SS22 SS23 SS25
Description RECTIFIER DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA
state ACTIVE DISCONTINUED ACTIVE ACTIVE - DISCONTINUED TRANSFERRED
Diode type rectifier diode rectifier diode rectifier diode rectifier diode - rectifier diode rectifier diode
Number of terminals - 2 2 2 - 2 2
Number of components - 1 1 1 - 1 1
Processing package description - SMB, 2 PIN SMB, 2 PIN Plastic, SMB, 2 PIN - Plastic, SMAJ, 2 PIN Plastic, SMB, 2 PIN
packaging shape - Rectangle Rectangle Rectangle - Rectangle Rectangle
Package Size - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
surface mount - Yes Yes Yes - Yes Yes
Terminal form - C BEND C BEND C BEND - C BEND C BEND
Terminal location - pair pair pair - pair pair
Packaging Materials - Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy
Craftsmanship - SCHOTTKY SCHOTTKY SCHOTTKY - SCHOTTKY SCHOTTKY
structure - single single single - single single
Diode component materials - silicon silicon silicon - silicon silicon
application - GENERAL PURPOSE GENERAL PURPOSE EFFICIENCY - GENERAL PURPOSE EFFICIENCY
Phase - 1 1 1 - 1 1
Maximum repetitive peak reverse voltage - 100 V 60 V 80 V - 30 V 50 V
Maximum average forward current - 2 A 2 A 2 A - 2 A 2 A
Maximum non-repetitive peak forward current - 50 A 50 A 50 A - 50 A 75 A
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