SS22 datasheet, PDF - EEWORLD Datasheet

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SS22: Description2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA; Categorysemiconductor Discrete semiconductor; File Size93KB，2 Pages; ManufacturerSUNMATE; Websitehttp://www.sunmate.tw/

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SS22 Overview

2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA

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SS22-SS210

2.0A Surface Mount Schottky Barrier Rectifier

Features

·

The plastic package carries Underwriters Laboratory

·

Flammability Classification 94V-0

For surface mounted applications

Metal silicon junction,majority carrier conduction

Low power loss,high efficiency

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds at terminals

B

Dim

SMB

Min

3.30

4.00

1.95

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.65

2.21

0.40

6.00

0.20

1.52

2.62

A

B

C

D

E

G

H

J

A

C

Mechanical Data

·

Case:

JEDEC DO-214AA molded plastic body

·

Terminals:

leads solderable per MIL-STD-750,

Method 2026

·

Polarity

: Color band denotes cathode end

·

Mounting Position

: Any

D

J

H

G

E

All Dimensions in mm

·

Weight:0.005

ounce, 0.138 grams

Maximum Ratings and Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, halfwave, 60Hz resistive or inductive load.

SYMBOLS

SS22

SS23

SS24

SS25

SS26

SS28 SS210

UNITS

VOLTS

Amps

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

at T

L

(see fig.1)

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 2.0A

Maximum DC reverse current

T

A

=25 C

at rated DC blocking voltage

T

A

=100 C

Typical junction capacitance (NOTE 1)

Typical thermal resistance (NOTE 2)

Operating junction temperature range

Storage temperature range

V

RRM

V

RMS

V

DC

I

(AV)

20

14

20

30

21

30

40

28

40

50

35

50

2.0

60

42

60

80

56

80

100

70

100

I

FSM

V

F

I

R

C

J

R

q

JA

T

J

,

T

STG

0.55

20

220

-65 to +125

50.0

0.70

0.5

10

180

75.0

-65 to +150

0.85

Amps

Volts

mA

pF

C/W

C

Note:1.Measured

at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

1 of 2

SS22 Related Products

	SS22	SS210	SS24	SS26	SS28	SS23	SS25
Description	2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA	RECTIFIER DIODE	2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA
Number of terminals	-	2	-	2	2	2	2
Number of components	-	1	-	1	1	1	1
Processing package description	-	SMB, 2 PIN	-	SMB, 2 PIN	Plastic, SMB, 2 PIN	Plastic, SMAJ, 2 PIN	Plastic, SMB, 2 PIN
state	-	DISCONTINUED	ACTIVE	ACTIVE	ACTIVE	DISCONTINUED	TRANSFERRED
packaging shape	-	Rectangle	-	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	-	Yes	-	Yes	Yes	Yes	Yes
Terminal form	-	C BEND	-	C BEND	C BEND	C BEND	C BEND
Terminal location	-	pair	-	pair	pair	pair	pair
Packaging Materials	-	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
Craftsmanship	-	SCHOTTKY	-	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
structure	-	single	-	single	single	single	single
Diode component materials	-	silicon	-	silicon	silicon	silicon	silicon
Diode type	-	rectifier diode	rectifier diode	rectifier diode	rectifier diode	rectifier diode	rectifier diode
application	-	GENERAL PURPOSE	-	GENERAL PURPOSE	EFFICIENCY	GENERAL PURPOSE	EFFICIENCY
Phase	-	1	-	1	1	1	1
Maximum repetitive peak reverse voltage	-	100 V	-	60 V	80 V	30 V	50 V
Maximum average forward current	-	2 A	-	2 A	2 A	2 A	2 A
Maximum non-repetitive peak forward current	-	50 A	-	50 A	50 A	50 A	75 A

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