MMBT2907FW
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
A
SOT-523
L
3
3
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available(MMBT2222FW)
Ideal for Medium Power Amplification and Switching
MMBT2907FW = 2F
Base
Top View
1
2
C B
1
2
Collector
K
E
D
MARKING CODE
F
REF.
G
Millimeter
Min.
Max.
1.50
1.70
1.45
1.75
0.75
0.85
0.70
0.90
0.90
1.10
0.25
0.33
H
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.00
0.15
0.28
0.40
0.10
0.20
-
-
0.75
0.85
J
Emitter
MAXIMUM RATINGS
(at Ta = 25°C unless otherwise specified)
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Total Device Dissapation FR-5 Board
T
A
=25℃
Thermal Resistance, Junction to Ambient
Junction & Storage Temperature
(1)
A
B
C
D
E
F
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
R
θJA
T
J
, T
STG
RATINGS
-60
-60
-5.0
-600
150
833
-55 ~ +150
UNIT
Vdc
Vdc
Vdc
mAdc
mW
℃
/W
℃
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
TEST CONDITIONS
OFF CHARACTERISTICS
(2)
I
C
= -10mAdc, I
B
= 0
I
C
= -10 µAdc, I
E
= 0
I
E
= -10 µAdc, I
C
= 0
V
CB
=-50 Vdc, I
E
= 0
V
EB
= -4 Vdc, I
C
= 0
ON CHARACTERISTICS
I
C
=-0.1mAdc, V
CE
= -10 Vdc
I
C
=-1.0mAdc, V
CE
= -10 Vdc
I
C
=-10mAdc, V
CE
= -10 Vdc
I
C
=-150mAdc, V
CE
= -10 Vdc
I
C
=-500mAdc, V
CE
= -10 Vdc
I
C
=-150mAdc, I
B
= -15 mAdc
I
C
=-500mAdc, I
B
= -50 mAdc
I
C
=-150mAdc, I
B
= -15 mAdc
I
C
=-500mAdc, I
B
= -50 mAdc
SMALL SIGNAL CHARACTERISTICS
V
CE
= -12Vdc, I
C
=-2.0mAdc,f=30MHz
V
CB
= -12 Vdc, I
E
= 0, f=1MHz
SWITCHING CHARACTERISTICS
V
CC
= -30 Vdc, I
C
= -150 mAdc,
I
B1
= -15 mAdc
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
MIN.
-60
-60
-5
-
-
75
100
100
100
50
-
MAX.
-
-
-
-10
-10
UNIT
Vdc
Vdc
Vdc
nAdc
nAdc
DC Current Gain
h
FE
300
-0.4
-1.6
-1.3
-2.6
Vdc
Vdc
Vdc
Vdc
MHz
pF
nS
nS
nS
nS
nS
nS
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Curren-Gain-Bandwidth Product
Output capacitance
Turn-On Time
Delay Time
V
CE(sat)
V
BE(sat)
F
T
C
oBO
T
on
T
d
T
r
T
oFF
T
S
T
F
140
5.0
45
10
40
100
80
30
Rise Time
Turn-Out Time
V
CC
=-60 Vdc, I
C
= -150mAdc,
Storage Time
I
B1
= I
B2
=-15 mAdc
Fall Time
Note:1.FR-5=1.0x0.75x0.062 in
2.Pulse Test: Pulse Width=300μ S, Duty Cycle≦ 2.0%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-Oct-2009 Rev. B
Page 1 of 3
MMBT2907FW
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-Oct-2009 Rev. B
Page 2 of 3
MMBT2907FW
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
20-Oct-2009 Rev. B
Page 3 of 3
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